China National Standards
China SJ Standards Search System  
  •  China "SJ" Standards List:
  • Standard  Code Standard English Title Standard Class Order
    SJ 2385-1983 (GDB-235 photomultiplier tube)

    China Electronics - SJ Standards

    SJ 2381-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD557, 3CD558 and 3CD657

    China Electronics - SJ Standards

    SJ 2362-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD159 and 3CD160

    China Electronics - SJ Standards

    SJ 2379-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD553, 3CD554 and 3CD653

    China Electronics - SJ Standards

    SJ 2378-1983 Detail specification for silicon PNPepitaxial planar low frequency high power transistors, Type 3CD551, 3CD552 and 3CD651

    China Electronics - SJ Standards

    SJ 2365-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD167 and 3CD367

    China Electronics - SJ Standards

    SJ 2376-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647

    China Electronics - SJ Standards

    SJ 2380-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD555, 3CD556 and 3CD655

    China Electronics - SJ Standards

    SJ 2382-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD559 and 3CD560

    China Electronics - SJ Standards

    SJ 2363-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD162 and 3Cd362

    China Electronics - SJ Standards

    SJ 2364-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3Cd164 and 3CD364

    China Electronics - SJ Standards

    SJ 2361-1983 Detail specification for silicon PNP low frequency low voltage high power low frequency low voltage high power transistors, Type 3CD157, 3CD158 and 3CD357

    China Electronics - SJ Standards

    SJ 2374-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD264, 3CD464

    China Electronics - SJ Standards

    SJ 2367-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD249, 3CD250 and 3CD449

    China Electronics - SJ Standards

    SJ 2377-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD548 3CD550 and 3CD649

    China Electronics - SJ Standards

    SJ 2357-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD149, 3CD150 and 3CD349

    China Electronics - SJ Standards

    SJ 2368-1983 Detail specification for silicon PNP low frequncy high voltage high power transistors, Type 3CD251, 3CD252 and 3CD451

    China Electronics - SJ Standards

    SJ 2371-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD257, 3CD258 and 3CD457

    China Electronics - SJ Standards

    SJ 2370-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD255, 3CD256 and 3CD455

    China Electronics - SJ Standards

    SJ 2366-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD447

    China Electronics - SJ Standards

    SJ 2373-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD262 and 3CD462

    China Electronics - SJ Standards

    SJ 2372-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD259 and 3CD260

    China Electronics - SJ Standards

    SJ 2369-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD253, 3CD254 and 3CD453

    China Electronics - SJ Standards

    SJ 2360-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD155, 3CD156 and 3CD355

    China Electronics - SJ Standards

    SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD267 and 3CD467

    China Electronics - SJ Standards

    SJ 2358-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD151, 3CD152 and 3CD351

    China Electronics - SJ Standards

    SJ 2359-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD153, 3CD154 and 3CD353

    China Electronics - SJ Standards

    SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix

    China Electronics - SJ Standards

    SJ 2355.5-1983 Method of measurement for luminous intensity and half-intensity angle of light-emitting devices

    China Electronics - SJ Standards

    SJ 2356-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD347

    China Electronics - SJ Standards

    SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2350-1983 (Console and end with a typewriter. General technical requirements)

    China Electronics - SJ Standards

    SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix

    China Electronics - SJ Standards

    SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2384-1983 Photomultiplier tubes, Type GDB-221

    China Electronics - SJ Standards

    SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices

    China Electronics - SJ Standards

    SJ 2355.1-1983 General procedures of measurement for light-emitting deivces

    China Electronics - SJ Standards

    SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2355.3-1983 Method of measurement for reverse current of light-emitting devices

    China Electronics - SJ Standards

    SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2353-1983 Vidicons, Type SF-27

    China Electronics - SJ Standards

    SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices

    China Electronics - SJ Standards

    SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2352-1983 Vidicons, Type SF-26

    China Electronics - SJ Standards

    SJ 2355.4-1983 Methods of measurement for junction capacitance of light-emitting devices

    China Electronics - SJ Standards

    SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes

    China Electronics - SJ Standards

    SJ 2351-1983 Vidicons, Type SF-25

    China Electronics - SJ Standards

    SJ 2349-1983 Generic specification for magnetic drum memories

    China Electronics - SJ Standards

    SJ 2348-1983 General specification for minicomputer

    China Electronics - SJ Standards

    SJ 2337-1983 General specification for waveguide rectangular assemblies

    China Electronics - SJ Standards

    SJ 2342-1983 Rectangular waveguide assemblies with 60-degree E-plane bend

    China Electronics - SJ Standards

    SJ 2340-1983 Rectangular waveguide assemblies with 90-degree E-plane bend

    China Electronics - SJ Standards

    SJ 2344-1983 Rectangular waveguide assemblies with 45-degree E-plane bend

    China Electronics - SJ Standards

    SJ 2346-1983 General specification for rectangular waveguides with terminal loads

    China Electronics - SJ Standards

    SJ 2339-1983 Rectangular waveguide assemblies with 90-degree H-plane bend

    China Electronics - SJ Standards

    SJ 2338-1983 Rectangular straight waveguide assemblies

    China Electronics - SJ Standards

    SJ 2341-1983 Rectangular waveguide assemblies with 60-degree H-plane bend

    China Electronics - SJ Standards

    SJ 2345-1983 Rectangular waveguide assemblies with twist

    China Electronics - SJ Standards

    SJ 2343-1983 Rectangular waveguide assemblies with 45-degree H-plane bend

    China Electronics - SJ Standards

    SJ 2332-1983 Methods of measurement for electrical performance of channel transission equipment for digital radio and microwave relay communication

    China Electronics - SJ Standards

    SJ 2326-1983 Generic specification for high and low temperature low pressure test chambers

    China Electronics - SJ Standards

    SJ 2330-1983 Generic specification for humidity test chambers

    China Electronics - SJ Standards

    SJ 2329-1983 Generic specification for temperature change test chambers

    China Electronics - SJ Standards

    SJ 2328-1983 Generic specification for high temperature test chambers

    China Electronics - SJ Standards

    SJ 2327-1983 Generic specification for low temperature test chambers

    China Electronics - SJ Standards

    SJ 2324-1983 External interface for shortwave single-sideband receivers

    China Electronics - SJ Standards

    SJ 2325-1983 Environmental test conditions and test procedures for land microwave communication equipment

    China Electronics - SJ Standards

    SJ 2323-1983 External interface for shortwave single-sideband transmitters

    China Electronics - SJ Standards

    SJ 2318-1983 Aluminium-nickel-cobalt permanent magnet for loudspeakers

    China Electronics - SJ Standards

    SJ 2316-1983 Specification for paper stock for use in loudspeakers

    China Electronics - SJ Standards

    SJ 2317-1983 Test methods for elasticity modulus and loss factor of paper stock for loudspeakers

    China Electronics - SJ Standards

    SJ/Z 2312-1983 Methods of measurement for climatic environmental test equipnent for electronic industry

    China Electronics - SJ Standards

    SJ 2303-1983 Concentric connectors, Type TX

    China Electronics - SJ Standards

    SJ 2309-1983 General specification for suppressed noise zinc oxide varistors

    China Electronics - SJ Standards

    SJ 2028.1-1983 Directly heated positive temperature coefficient thermistors used for temperature compensation for Type MZ11

    China Electronics - SJ Standards

    SJ 2028.2-1983 Positive temperature coefficient thermistors used for temperature control for Type MZ61

    China Electronics - SJ Standards

    SJ 2309.1-1983 Suppressed noise zinc oxide varistors for Type MYZ1

    China Electronics - SJ Standards

    SJ 2307-1983 General specification for zinc oxide varistors for use in lightning arresters

    China Electronics - SJ Standards

    SJ 2311-1983 Generic specification for environmental test equipment for electronic industry

    China Electronics - SJ Standards

    SJ 2314-1983 General specification for d. c. digital voltmeters

    China Electronics - SJ Standards

    SJ 2315-1983 Methods of measurement for d. c. digital voltmeters

    China Electronics - SJ Standards

    SJ 2296-1983 Variable glass vacuum capacitors for Type CKBB400/7. 5/40

    China Electronics - SJ Standards

    SJ 2295-1983 Method of accelerated life-test for receiving cathode-ray-tubes

    China Electronics - SJ Standards

    SJ 2280-1983 (3DG131 type NPN silicon epitaxial planar transistor low power UHF)

    China Electronics - SJ Standards

    SJ 2279-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG123

    China Electronics - SJ Standards

    SJ 2289-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151

    China Electronics - SJ Standards

    SJ 2274-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG113

    China Electronics - SJ Standards

    SJ 2283-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG144

    China Electronics - SJ Standards

    SJ 2288-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG149

    China Electronics - SJ Standards

    SJ 2294-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG156

    China Electronics - SJ Standards

    SJ 2291-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG153

    China Electronics - SJ Standards

    SJ 2290-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151

    China Electronics - SJ Standards

    SJ 2273-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG81

    China Electronics - SJ Standards

    SJ 2285-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG146

    China Electronics - SJ Standards


    Find out:7662Items   |  To Page of: First -Previous-Next -Last  | [61] [62] [63] [64] [65] [66] [67]

     
     

    +86-755-25831330        info@transcustoms.com 
    106# Zhongmao Mansion,No.1 Beizhan Road,Shenzhen,China
    ©  RJS Copyright  2001-2018 All Rights Reserved

    - Since 2001 -
    Focus on China Standards & Compliance Services

    www.rjs.cn

    China Licenses

    www.transcustoms.com

    China HS code & Tariff

    www.gbstandards.org

    China National Standards