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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 42907-2023 |
Testing of non-equilibrium carrier recombination lifetime in silicon ingots, silicon blocks and silicon wafers Non-contact eddy current induction method {译} 硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法 |
China National Standards Test method carrier |
 English PDF |
| GB/T 14146-2021 |
Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method 硅外延层载流子浓度的测试 电容-电压法 |
China National Standards Test method carrier |
English PDF |
| GB/T 26068-2018 |
Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method 硅片和硅锭载流子复合寿命的测试-非接触微波反射光电导衰减法 |
China National Standards Test method carrier |
English PDF |
| GB/T 36705-2018 |
Test method for carrier concentration of gallium nitride substrates—Raman spectrum method 氮化镓衬底片载流子浓度的测试 拉曼光谱法 |
China National Standards Test method carrier |
English PDF |
| GB/T 26068-2010 |
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 硅片载流子复合寿命的无接触微波反射光电导衰减测试方法 |
China National Standards Test method carrier |
English PDF |
| GB/T 1553-2009 |
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 硅和锗体内少数载流子寿命测定光电导衰减法 |
China National Standards Test method carrier |
English PDF |
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