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  •  China "Semiconducto" GB Standards List:
  • GB/T 36005-2018- English Version of China National Standard
    Measuring methods of optical radiation safety for Semiconductor lighting equipments and systems
    半导体照明设备和系统的光辐射安全测试方法
    GB/T 35010.1-2018- English Version of China National Standard
    Semiconductor die products—Part 1:Requirements for procurement and use
    半导体芯片产品 第1部分:采购和使用要求
    GB/T 35010.2-2018- English Version of China National Standard
    Semiconductor die products—Part 2: Exchange data formats
    半导体芯片产品 第2部分:数据交换格式
    GB/T 35006-2018- English Version of China National Standard
    Semiconductor integrated circuits—Measuring method of level converter
    半导体集成电路 电平转换器测试方法
    GB/T 35010.5-2018- English Version of China National Standard
    Semiconductor die products—Part 5:Requirements for concerning electrical simulation
    半导体芯片产品 第5部分:电学仿真要求
    GB/T 35010.4-2018- English Version of China National Standard
    Semiconductor die products—Part 4: Requirements for die users and suppliers
    半导体芯片产品 第4部分:芯片使用者和供应商要求
    GB/T 4377-2018- English Version of China National Standard
    Semiconductor integrated circuits—Measuring method of voltage regulators
    半导体集成电路 电压调整器测试方法
    GB/T 14028-2018- English Version of China National Standard
    Semiconductor integrated circuits—Measuring method of analogue switch
    半导体集成电路 模拟开关测试方法
    GB/T 35007-2018- English Version of China National Standard
    Semiconductor integrated circuits—Measuring method of low voltage differential signaling circuitry
    半导体集成电路 低电压差分信号电路测试方法
    GB/T 35010.8-2018- English Version of China National Standard
    Semiconductor die products—Part8: EXPRESS model schema for data exchange
    半导体芯片产品 第8部分:数据交换的EXPRESS格式
    GB/T 35010.6-2018- English Version of China National Standard
    Semiconductor die products—Part 6: Requirements for concerning thermal simulation
    半导体芯片产品 第6部分:热仿真要求
    GB/T 35010.3-2018- English Version of China National Standard
    Semiconductor die products—Part 3: Guide for handling, packing and storage
    半导体芯片产品 第3部分:操作、包装和贮存指南
    GB/T 35010.7-2018- English Version of China National Standard
    Semiconductor die products—Part 7: XML schema for data exchange
    半导体芯片产品 第7部分:数据交换的XML格式
    GB/T 34971-2017- English Version of China National Standard
    Guide for gaseous effluent handling in Semiconductor industry
    半导体制造用气体处理指南
    GB/T 5226.33-2017- English Version of China National Standard
    Electrical safety of machinary—Electrical equipment of machines—Part 33: Requirements for Semiconductor fabrication equipment
    机械电气安全 机械电气设备 第33部分:半导体设备技术条件
    GB/T 34507-2017- English Version of China National Standard
    Palladium coated copper bonding wire for Semiconductor package
    封装键合用镀钯铜丝
    GB/T 34502-2017- English Version of China National Standard
    Gold-coated silver and silver alloy bonding wires for Semiconductor package
    封装键合用镀金银及银合金丝
    GB/T 15651.4-2017- English Version of China National Standard
    Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers
    半导体器件 分立器件 第5-4部分:光电子器件 半导体激光器
    GB/T 249-2017- English Version of China National Standard
    The rule of type designation for discrete Semiconductor devices
    半导体分立器件型号命名方法
    GB/T 14048.12-2016- English Version of China National Standard
    Low-voltage switchgear and controlgear—Part 4-3: Contactors and motor-starters—AC Semiconductor controllers and contactors for non-motor loads
    低压开关设备和控制设备 第4-3部分:接触器和电动机起动器 非电动机负载用交流半导体控制器和接触器
    GB/T 14048.6-2016- English Version of China National Standard
    Low-voltage switchgear and controlgear—Part 4-2: Contactors and motor-starters—AC Semiconductor motor controllers and starters (including soft-starters)
    低压开关设备和控制设备 第4-2部分:接触器和电动机起动器 交流电动机用半导体控制器和起动器(含软起动器)
    GB/T 32817-2016- English Version of China National Standard
    Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS
    半导体器件 微机电器件 MEMS总规范
    SJ/T 11577-2016- English Version of China Electronics Standard
    (SJ/T 11394-2009 "Semiconductor light-emitting diode test method" Application Guide)
    sj/t 11394-2009《半导体发光二极管测试方法》应用指南
    SJ/T 2749-2016- English Version of China Electronics Standard
    (The Semiconductor laser diode test)
    半导体激光二极管测试方法
    SJ/T 2658.15-2016- English Version of China Electronics Standard
    (The Semiconductor infrared emitting diodes measuring methods - Part 15: Thermal resistance)
    半导体红外发射二极管测量方法 第15部分:热阻
    SJ/T 2658.16-2016- English Version of China Electronics Standard
    (The Semiconductor infrared emitting diodes measuring methods - Part 16: photoelectric conversion efficiency)
    半导体红外发射二极管测量方法 第16部分:光电转换效率
    SJ/T 2658.14-2016- English Version of China Electronics Standard
    (The Semiconductor infrared emitting diodes measuring methods - Part 14: Junction Temperature)
    半导体红外发射二极管测量方法 第14部分:结温
    SJ/T 11586-2016- English Version of China Electronics Standard
    (The Semiconductor device 10keV low-energy X-ray test method for total dose radiation)
    半导体器件 10kev低能x射线总剂量辐射试验方法
    GB/T 13539.4-2016- English Version of China National Standard
    Low-voltage fuses—Part 4: Supplementary requirements for fuse-links for the protection of Semiconductor devices
    低压熔断器 第4部分:半导体设备保护用熔断体的补充要求
    SJ/T 1486-2016- English Version of China Electronics Standard
    (Discrete Semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification)
    半导体分立器件 3cg180型硅pnp高频高反压小功率晶体管详细规范
    SJ/T 1477-2016- English Version of China Electronics Standard
    (Discrete Semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification)
    半导体分立器件 3cg120型硅pnp高频小功率晶体管详细规范
    SJ/T 1472-2016- English Version of China Electronics Standard
    (Discrete Semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification)
    半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范
    SJ/T 1480-2016- English Version of China Electronics Standard
    (Discrete Semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification)
    半导体分立器件 3cg130型硅pnp高频小功率晶体管详细规范
    SJ/T 1831-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk28型npn硅小功率开关晶体管详细规范
    SJ/T 1826-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk100型npn硅小功率开关晶体管详细规范
    SJ/T 1838-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk29型npn硅小功率开关晶体管详细规范
    SJ/T 1839-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk108型npn硅小功率开关晶体管详细规范
    SJ/T 1833-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk103型npn硅小功率开关晶体管详细规范
    SJ/T 1834-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk104型npn硅小功率开关晶体管详细规范
    SJ/T 1830-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk101型npn硅小功率开关晶体管详细规范
    SJ/T 1832-2016- English Version of China Electronics Standard
    (Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification)
    半导体分立器件 3dk102型npn硅小功率开关晶体管详细规范
    YY 1289-2016- English Version of China Medicine & Medical Device Standard
    (Laser therapy equipment ophthalmic Semiconductor laser photocoagulation instrument)
    激光治疗设备眼科半导体激光光凝仪
    GB/T 15291-2015- English Version of China National Standard
    Semiconductor devices—Part 6: Thyristors
    半导体器件 第6部分:晶闸管
    GB/T 4023-2015- English Version of China National Standard
    Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes
    半导体器件 分立器件和集成电路 第2部分:整流二极管
    SJ/T 2658.3-2015- English Version of China Electronics Standard
    Measuring method for Semiconductor infrared-emitting diode - Part 3: Reverse voltage and reverse current
    半导体红外发射二极管测量方法 第3部分:反向电压和反向电流
    SJ/T 2658.10-2015- English Version of China Electronics Standard
    Measuring method for Semiconductor infrared-emitting diode - Part 10: Modulation bandwidth
    半导体红外发射二极管测量方法 第10部分:调制带宽
    SJ/T 2658.4-2015- English Version of China Electronics Standard
    Measuring method for Semiconductor infrared-emitting diode - Part 4: Total capacitance
    半导体红外发射二极管测量方法 第4部分:总电容
    SJ/T 2658.1-2015- English Version of China Electronics Standard
    Measuring method for Semiconductor infrared-emitting diode - Part 1: General
    半导体红外发射二极管测量方法 第1部分:总则
    SJ/T 2658.12-2015- English Version of China Electronics Standard
    Measuring method for Semiconductor infrared-emitting diode - Part 12: Peak-emission wavelength and spectral radiant bandwidth
    半导体红外发射二极管测量方法 第12部分:峰值发射波长和光谱辐射带宽
    SJ/T 2658.8-2015- English Version of China Electronics Standard
    Measuring method for Semiconductor infrared-emitting diode - Part 8: Radiant intensity
    半导体红外发射二极管测量方法 第8部分:辐射强度

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