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 China "SJ 1471-1979" standard english version information:

1. China SJ 1471-1979 Standard Chinese version, you can purchase directly online; After receive your payment, we will send the GB Standards PDF file to your Email within 24 Hr.
2. China SJ 1471-1979 Standard English version is not ready-made,only after get your order, then we translate them, time usually need 3-5 days. Detail refere: "How to purchase the English version China GB Standards?"
Item Content
GB Standard  Code SJ 1471-1979
GB Standard Class China Electronics Standard
GB Standard English Title Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG103
GB Standard Chinese Title 3cg103型pnp硅外延平面高频小功率三极管
Applicable Category China Electronics-Electronics
Chinese Version Price $15 USD per 50 pages
English Translation Price About $15  per 1 page; Detail enquire us for
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China "SJ 1471-1979" Standard english version Add to Cart
Note The SJ 1471-1979 standard english translation Prepayment unit $100 USD, is not mean this SJ 1471-1979 standard english version price is $100 USD, it is only a basic unit of prepayment for translation, The actual translation fee and prepayment are depend on the amount of SJ 1471-1979 standard Chinese words, We request 80% prepayment of the total translation fee.
For example, if the GB standard english price is $500, you need pay $400 prepayment, Four Quantities of the $100 prepayment unit.
  •  Relational standard of SJ 1471-1979;    
  • Standard  Code GB Standard Title
  • SJ 50033/172-2007
  • Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power transistor
  • SJ 50033/173-2007
  • Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power transistor
  • SJ 50033/175-2007
  • Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power transistor
  • SJ 50033/176-2007
  • Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power transistor
  • SJ 50033/170-2007
  • Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power transistor
  • SJ 50033/171-2007
  • Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power transistor
  • SJ 50033/174-2007
  • Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power transistor
  • SJ 50033/169-2004
  • Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor
  • SJ 50033/168-2004
  • Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor
  • SJ 50033/166-2004
  • Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor
     
     

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