China National Standards

China Power GB Standards Search System


GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "Power" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ 2104-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS47 Power
    China Electronics Standards
  • SJ 2101-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS44 Power
    China Electronics Standards
  • SJ 2103-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS46 Power
    China Electronics Standards
  • SJ 2095-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS38 Power
    China Electronics Standards
  • SJ 2094-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS37 Power
    China Electronics Standards
  • SJ 2100-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS43 Power
    China Electronics Standards
  • SJ 2102-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS45 Power
    China Electronics Standards
  • SJ 2092-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS35 Power
    China Electronics Standards
  • SJ 2106-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS49 Power
    China Electronics Standards
  • SJ 2107-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS50 Power
    China Electronics Standards
  • SJ 2108-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS51 Power
    China Electronics Standards
  • SJ 1836-1981
  • (3DK106 type NPN silicon epitaxial planar low Power switching transistor) Power
    China Electronics Standards
  • SJ 1835-1981
  • (3DK105 type NPN silicon epitaxial planar low Power switching transistor) Power
    China Electronics Standards
  • SJ 1837-1981
  • (3DK107 type NPN silicon epitaxial planar low Power switching transistor) Power
    China Electronics Standards
  • SJ 2057-1982
  • Power series and fundamental parameters of horn loudspeakers Power
    China Electronics Standards
  • GB/T 2880-1981
  • Hydraulic fluid Power--Cylinder rod and piston seals for reciprocating applications--Dimensions andtolerances of housings--Narrow section series Power
    China National Standards
  • SJ 2013-1982
  • Power travelling wave tubes, Type B-218 Power
    China Electronics Standards
  • SJ 2012-1982
  • Power travelling wave tubes, Type B-211 Power
    China Electronics Standards
  • DLGJ 26-1982
  • (Pulverized coal Power plant chimney pipe design (Trial)) Power
    China Electricity & Power Standards
  • JJG 293-1982
  • Verification Regulation of Medium Level Laser Power Meter Power
    China Metrological Standards
  • JJG 282-1981
  • Verification regulation of coaxial thin film thermoelectric Power head Power
    China Metrological Standards
  • SJ 1876-1981
  • Methods of measurement for stability of output Power for gas laser devices Power
    China Electronics Standards
  • SJ 1875-1981
  • Methods of measurement for output Power of gas laser devices Power
    China Electronics Standards
  • SJ 1869-1981
  • Continuous wave Power amplification klystrons, Type KF-115 Power
    China Electronics Standards
  • SJ 1860-1981
  • Measurement of AM-PM conversion coefficient of Power klystrons Power
    China Electronics Standards
  • SJ 1680-1980
  • (3DG150 high frequency low Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1685-1980
  • (3DD201 low-Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1687-1980
  • (3DD203 low-Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1681-1980
  • (3DA150 frequency Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1691-1980
  • (3DD207 low-Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1688-1980
  • (3DD204 low-Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1684-1980
  • (3DD200 low-Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1841-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK100 Power
    China Electronics Standards
  • SJ 1829-1981
  • Detail specification silicon NPN epitaxial planar low Power switching transistors, Type 3DK5 Power
    China Electronics Standards
  • SJ 1833-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK103 Power
    China Electronics Standards
  • SJ 1832-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK102 Power
    China Electronics Standards
  • SJ 1830-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK101 Power
    China Electronics Standards
  • SJ 1844-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK112 Power
    China Electronics Standards
  • SJ 1828-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK53 Power
    China Electronics Standards
  • SJ 1827-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK6 Power
    China Electronics Standards
  • SJ 1839-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK108 Power
    China Electronics Standards
  • SJ 1838-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK29 Power
    China Electronics Standards
  • SJ 1842-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK110 Power
    China Electronics Standards
  • SJ 1843-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK111 Power
    China Electronics Standards
  • SJ 1834-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK104 Power
    China Electronics Standards
  • SJ 1831-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK28 Power
    China Electronics Standards
  • SJ 1846-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK120 Power
    China Electronics Standards
  • SJ 1840-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK14 Power
    China Electronics Standards
  • SJ 1848-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK130 Power
    China Electronics Standards
  • SJ 1826-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK100 Power
    China Electronics Standards
  • SJ 1847-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK121 Power
    China Electronics Standards
  • SJ 1825-1981
  • Detail specification for silicon NPN epitaxial planar low Power switching transistors, Type 3DK21 Power
    China Electronics Standards
  • SJ 1845-1981
  • Detail specification for silicon PNP epitaxial planar low Power switching transistors, Type 3CK113 Power
    China Electronics Standards
  • JJG 249-1981
  • Verification Regulation of Laser Power Meter in Low Range Power
    China Metrological Standards
  • SJ 1671-1980
  • Specification for low voltage d. c. regulated Power supply used in radar equipment Power
    China Electronics Standards
  • SJ/Z 1758-1981
  • Typical calculations for 400Hz three-phase Power transformers using E-cores Power
    China Electronics Standards
  • SJ/Z 1763-1981
  • Typical calculations for 50Hz three-phase Power transformers using E-cores Power
    China Electronics Standards
  • SJ/Z 1762-1981
  • Typical calculations for 50Hz single-phase Power tranformers and filter choke using C-cores Power
    China Electronics Standards
  • SJ 1710-1981
  • Measurement of output Power of power klystrons Power
    China Electronics Standards
  • SJ 1712-1981
  • Measurement of resettability of Power klystrons Power
    China Electronics Standards
  • SJ 1714-1981
  • Measurement of intermodulation distortion ration of Power klystrons Power
    China Electronics Standards
  • SJ 1711-1981
  • Measurement of operating frequency range of Power klystrons Power
    China Electronics Standards
  • SJ 1708-1981
  • Measurement of bandwidth of Power klystrons Power
    China Electronics Standards
  • SJ 1713-1981
  • Measurement of phaseshift of Power klystrons Power
    China Electronics Standards
  • SJ 1703-1981
  • Method of accelerated life test of low Power electronic tubes Power
    China Electronics Standards
  • SJ 1720-1981
  • Measurement of spectrum of Power klystrons Power
    China Electronics Standards
  • SJ 1704-1981
  • Generic specification for Power klystrons Power
    China Electronics Standards
  • SJ 1721-1981
  • Measurement of frequency temperaturre coefficient of Power klystrons Power
    China Electronics Standards
  • SJ 1718-1981
  • Measurement of cathode pulse current of Power klystrons Power
    China Electronics Standards
  • SJ 1706-1981
  • Measurement of electron-beam transmission efficiency of Power klystrons Power
    China Electronics Standards
  • SJ 1705-1981
  • Measurement conditions of Power klystrons Power
    China Electronics Standards
  • SJ 1707-1981
  • Measurement of gains of Power klystrons Power
    China Electronics Standards
  • SJ 1709-1981
  • Measurement of input Power of power klystrons Power
    China Electronics Standards
  • SJ 1716-1981
  • Measurement of pulse characteristics of Power klystrons Power
    China Electronics Standards
  • SJ 1717-1981
  • Measurement of pulse voltage of Power klystrons Power
    China Electronics Standards
  • SJ 1719-1981
  • Measurement of oscillation frequency of Power klystrons Power
    China Electronics Standards
  • JJG 248-1981
  • Verification regulation of working standard of laser Power meter in low range Power
    China Metrological Standards
  • SJ 1947-1981
  • Detail specification for silicon Power rectifier diodes, Type 2CZ32B, 2DZ32B, 2CZ33B and 2DZ33B Power
    China Electronics Standards
  • DLJ 58-1981
  • (Power Construction and Acceptance) Power
    China Electricity & Power Standards
  • TB/T 1395-1981
  • (110-volt control Power screen technology conditions) Power
    China Railway & Train Standards
  • DLJ 204-1981
  • (Test procedures rock HydroPower Engineering) Power
    China Electricity & Power Standards
  • SJ 1683-1980
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA152 Power
    China Electronics Standards
  • SJ 1690-1980
  • Detail specification for silicon NPN low-frequency high Power transistors, Type 3DD206 Power
    China Electronics Standards
  • SJ 1692-1980
  • Detail specification for silicon NPN low-frequency high Power transistors, Type 3DD208 Power
    China Electronics Standards
  • SJ 1693-1980
  • Detail specification for silicon PNP low-frequency high Power transistors, Type 3AD150 Power
    China Electronics Standards
  • SJ 1682-1980
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA151 Power
    China Electronics Standards
  • SJ 1686-1980
  • Detail specification for silicon NPN low-frequency high Power transistors, Type 3DD202 Power
    China Electronics Standards
  • SJ 1689-1980
  • Detail specification for silicon NPN low-frequency high Power transistors, Type 3DD205 Power
    China Electronics Standards
  • GB/T 2347-1980
  • Hydraulic fluid Power--Pumps and motors--Geometric displacements Power
    China National Standards
  • GB/T 2349-1980
  • Fluid Power systems and components--Cylinders--Basic series of piston strokes Power
    China National Standards
  • GB/T 2350-1980
  • Fluid Power systems and components--Cylinders--Piston rod thread dimensions and types Power
    China National Standards
  • SJ 1672-1980
  • Detail specification for silicon NPN forward AGC high frequency low Power transistors, Type 3DG253 Power
    China Electronics Standards
  • SJ 1673-1980
  • Detail specification for silicon NPN forward AGC high frequency low Power transistors, Type 3DG254 Power
    China Electronics Standards
  • SJ 1670-1980
  • Terminology for Power supplies for use in electronic equipment Power
    China Electronics Standards
  • SJ 1641-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD162 and 3DD163 Power
    China Electronics Standards
  • SJ 1638-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD155 and 3DD156 Power
    China Electronics Standards
  • SJ 1647-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD253 and 3D Power
    China Electronics Standards
  • SJ 1648-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD255 and 3DD256 Power
    China Electronics Standards
  • SJ 1654-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD270, 3DD271 and 3Dd272 Power
    China Electronics Standards
  • SJ 1652-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD264, 3DD265 and 3DD266 Power
    China Electronics Standards

    Find out:4617Items   |  To Page of: First -Previous-Next -Last  | [39] [40] [41] [42] [43] [44] [45]

    +86-755-25831330        info@transcustoms.com 
    106# Zhongmao Mansion,No.1 Beizhan Road,Shenzhen,China
    ©  RJS Copyright  2001-2018 All Rights Reserved

    - Since 2001 -
    Focus on China Standards & Compliance Services

    www.rjs.cn

    China Licenses

    www.transcustoms.com

    China HS code & Tariff

    www.gbstandards.org

    China National Standards