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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "Power" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ 1651-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD262 and 3DD263 Power
    China Electronics Standards
  • SJ 1639-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD157 and 3DD158 Power
    China Electronics Standards
  • SJ 1646-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD175 and 3DD176 Power
    China Electronics Standards
  • SJ 1649-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD257 and 3DD258 Power
    China Electronics Standards
  • SJ 1650-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD259, 3DD260 and 3DD261 Power
    China Electronics Standards
  • SJ 1637-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD153 and 3DD154 Power
    China Electronics Standards
  • SJ 1644-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD170, 3DD171 and 3DD172 Power
    China Electronics Standards
  • SJ 1643-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD167, 3DD168 and 3DD169 Power
    China Electronics Standards
  • SJ 1636-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD151 and 3DD152 Power
    China Electronics Standards
  • SJ 1655-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD275 and 3DD276 Power
    China Electronics Standards
  • SJ 1653-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD267, 3DD268 and 3DD269 Power
    China Electronics Standards
  • SJ 1640-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD159, 3DD160 and 3DD161 Power
    China Electronics Standards
  • SJ 1645-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD173 and 3DD174 Power
    China Electronics Standards
  • SJ 1642-1980
  • Detail specification for silicon NPN diffused mesa low-frequency high Power transistors, Type 3DD164, 3DD165 and 3DD166 Power
    China Electronics Standards
  • SJ 1468-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG100 Power
    China Electronics Standards
  • SJ 1501-1979
  • (Electronic equipment with low voltage DC Power supply requirements of the basic parameters and measurement methods) Power
    China Electronics Standards
  • SJ 1500-1979
  • Basic parameter requirements for low-volatge d. c. regulated Power supply series for electronic equipment Power
    China Electronics Standards
  • GB/T 1726-1979
  • Methods of test for hiding Power of paints Power
    China National Standards
  • SJ 1478-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG121 Power
    China Electronics Standards
  • SJ 1473-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG111 Power
    China Electronics Standards
  • SJ 1479-1979
  • Detail specifiation for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG122 Power
    China Electronics Standards
  • SJ 1485-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power high reverse voltage transistors, Type 3CG170 Power
    China Electronics Standards
  • SJ 1476-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG114 Power
    China Electronics Standards
  • SJ 1481-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG131 Power
    China Electronics Standards
  • SJ 1480-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG130 Power
    China Electronics Standards
  • SJ 1475-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG113 Power
    China Electronics Standards
  • SJ 1471-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG103 Power
    China Electronics Standards
  • SJ 1470-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG102 Power
    China Electronics Standards
  • SJ 1477-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG120 Power
    China Electronics Standards
  • SJ 1484-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power high reverse voltage transistors, Type 3CG160 Power
    China Electronics Standards
  • SJ 1469-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG101 Power
    China Electronics Standards
  • SJ 1483-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power noise transistors, Type 3CG140 Power
    China Electronics Standards
  • SJ 1486-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power high reverse voltage transistors, Type 3CG180 Power
    China Electronics Standards
  • SJ 1474-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG112 Power
    China Electronics Standards
  • SJ 1472-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG110 Power
    China Electronics Standards
  • SJ 1482-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low Power transistors, Type 3CG132 Power
    China Electronics Standards
  • SJ 1430-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA89 Power
    China Electronics Standards
  • SJ 1411-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA5 Power
    China Electronics Standards
  • SJ 1425-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA106 Power
    China Electronics Standards
  • SJ 1392-1978
  • Methods of measurement for excess noise Power of noise-generator diodes Power
    China Electronics Standards
  • SJ 1424-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA105 Power
    China Electronics Standards
  • SJ 1422-1978
  • Detail specificaiton for silicon NPN high-frequency high Power transistors, Type 3DA37 Power
    China Electronics Standards
  • SJ 1427-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA92 Power
    China Electronics Standards
  • SJ 1421-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA22 Power
    China Electronics Standards
  • SJ 1428-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA107 Power
    China Electronics Standards
  • SJ 1390-1978
  • Methods of measurement for nonliearity factor of excess noise Power of noise-generator diodes Power
    China Electronics Standards
  • SJ 1426-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA21 Power
    China Electronics Standards
  • SJ 1417-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA103 Power
    China Electronics Standards
  • SJ 1408-1978
  • Detail specification for silicon NPN high frequency high Power transistors, Type 3DA101 Power
    China Electronics Standards
  • SJ 1414-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA102 Power
    China Electronics Standards
  • SJ 1429-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA108 Power
    China Electronics Standards
  • SJ 1406-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA96 Power
    China Electronics Standards
  • SJ 1405-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA1 Power
    China Electronics Standards
  • SJ 1431-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA39 Power
    China Electronics Standards
  • SJ 1423-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA32 Power
    China Electronics Standards
  • SJ 1420-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA104 Power
    China Electronics Standards
  • SJ 1412-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA14 Power
    China Electronics Standards
  • SJ 1416-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA100 Power
    China Electronics Standards
  • SJ 1407-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA4 Power
    China Electronics Standards
  • SJ 1418-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA10 Power
    China Electronics Standards
  • SJ 1419-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA18 Power
    China Electronics Standards
  • SJ 1410-1978
  • (3DA98 frequency Power silicon NPN transistor) Power
    China Electronics Standards
  • SJ 1413-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA2 Power
    China Electronics Standards
  • SJ 1415-1978
  • Detail specification for silicon NPN high-frequency high Power transistors, Type 3DA28 Power
    China Electronics Standards
  • HG 2-1198-1979
  • (Electrophoretic paint throwing Power assay (pipe method)) Power
    China Chemical Industry Standards
  • HG/T 3339-1979
  • (Electrophoretic paint throwing Power assay (pipe method)) Power
    China Chemical Industry Standards
  • SJ 1269-1977
  • Through-hole glass Power insulators, Type FBJ Power
    China Electronics Standards
  • SJ/Z 1172-1977
  • Methods for determination of throwing Power of electroplating solution Power
    China Electronics Standards
  • SJ 936-1975
  • Detail specification for silicon NPN low frequency high Power high reverse voltage transistors, Type 3DD103 and 3DD104 Power
    China Electronics Standards
  • SJ 934-1975
  • Detail specification for silicon NPN low frequency high Power high reversse voltage transistors, Type 3DD100 Power
    China Electronics Standards
  • SJ 935-1975
  • Detail specification for silicon NPN low frequency high Power high reverse voltage transistors, Type 3DD101 and 3DD102 Power
    China Electronics Standards
  • SJ 800-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power high reverse voltage transistors, Type 3DG180 Power
    China Electronics Standards
  • SJ 774-1974
  • Detail specification for silicon NPN alloy diffused low-frequency high Power transistors, Type 3DD64 Power
    China Electronics Standards
  • SJ 782-1974
  • Detail specfication for silicon NPN planar high frequency low Power transistors, Type 3DG100 Power
    China Electronics Standards
  • SJ 773-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high Power transistors, Type 3DD62 and 3DD63 Power
    China Electronics Standards
  • SJ 770-1974
  • Detail specification for silicon NPN alloy diffused low-frequency high Power transistors, Type 3DD58 Power
    China Electronics Standards
  • SJ 767-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high Power transistors, Type 3DD53 and 3DD54 Power
    China Electronics Standards
  • SJ 780-1974
  • Detail specification for silicon NPN alloy diffused low-frequency high Power transistors, Type 3DD72 Power
    China Electronics Standards
  • SJ 768-1974
  • Detail specification for silicon NPN alloy diffused low-frequency high Power transistors, Type 3DD55 Power
    China Electronics Standards
  • SJ 772-1974
  • Detail specification for silion NPN alloy diffused low-frequency high Power transistors, Type 3DD61 Power
    China Electronics Standards
  • SJ 766-1974
  • Detail specification for silicon NPN alloy diffused low-frequency high Power transistors, Type 3DD52 Power
    China Electronics Standards
  • SJ 792-1974
  • (3DG130 type NPN silicon epitaxial planar high frequency low Power transistors) Power
    China Electronics Standards
  • SJ 771-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high Power transistors, Type 3DD59 and 3DD60 Power
    China Electronics Standards
  • SJ 783-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power transistors, Type 3DG101 Power
    China Electronics Standards
  • SJ 801-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power high reverse voltage transistors, Type 3DG181 Power
    China Electronics Standards
  • SJ 765-1974
  • Detail specification for silicon NPN eqitaxial planar low-frequency high Power transistors, Type 3DD50 and 3DD51 Power
    China Electronics Standards
  • SJ 790-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power transistors, Type 3DG121 Power
    China Electronics Standards
  • SJ 795-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power low noise transistors, Type 3DG142 Power
    China Electronics Standards
  • SJ 775-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high Power transistors, Type 3DD65 and 3DD66 Power
    China Electronics Standards
  • SJ 777-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high Power transistors, Type 3DD68 and 3DD69 Power
    China Electronics Standards
  • SJ 778-1974
  • Detail specification for silicon NPN alloy diffused low-frequency high Power transistors, Type 3DD70 Power
    China Electronics Standards
  • SJ 802-1974
  • (3DG182 type NPN silicon epitaxial planar high frequency low Power high back pressure triode) Power
    China Electronics Standards
  • SJ 799-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power reverse voltage transistors, Type 3DG170 Power
    China Electronics Standards
  • SJ 798-1974
  • (3DG162 type NPN silicon epitaxial planar high frequency low Power high back pressure triode) Power
    China Electronics Standards
  • SJ 797-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power high reverse voltage transistors, Type 3DG161 Power
    China Electronics Standards
  • SJ 781-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high Power transistors, Type 3DD73 Power
    China Electronics Standards
  • SJ 791-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power transistors, Type 3DG122 Power
    China Electronics Standards
  • SJ 796-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power high reverse voltage transistors, Type 3DG160 Power
    China Electronics Standards
  • SJ 784-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power transistors, Type 3DG102 Power
    China Electronics Standards
  • SJ 785-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low Power transistors, Type 3DG103 Power
    China Electronics Standards

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