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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "Specification" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ 2356-1983
  • Detail Specification for silicon PNP low frequency low voltage high power transistors, Type 3CD347 Specification
    China Electronics Standards
  • SJ 2349-1983
  • Generic Specification for magnetic drum memories Specification
    China Electronics Standards
  • SJ 2348-1983
  • General Specification for minicomputer Specification
    China Electronics Standards
  • SJ 2337-1983
  • General Specification for waveguide rectangular assemblies Specification
    China Electronics Standards
  • SJ 2346-1983
  • General Specification for rectangular waveguides with terminal loads Specification
    China Electronics Standards
  • SJ 2326-1983
  • Generic Specification for high and low temperature low pressure test chambers Specification
    China Electronics Standards
  • SJ 2330-1983
  • Generic Specification for humidity test chambers Specification
    China Electronics Standards
  • SJ 2329-1983
  • Generic Specification for temperature change test chambers Specification
    China Electronics Standards
  • SJ 2328-1983
  • Generic Specification for high temperature test chambers Specification
    China Electronics Standards
  • SJ 2327-1983
  • Generic Specification for low temperature test chambers Specification
    China Electronics Standards
  • GB/T 3556-1983
  • Standard gray and color test chart for photography--Specifications Specification
    China National Standards
  • SJ 2316-1983
  • Specification for paper stock for use in loudspeakers Specification
    China Electronics Standards
  • SJ 2309-1983
  • General Specification for suppressed noise zinc oxide varistors Specification
    China Electronics Standards
  • SJ 2307-1983
  • General Specification for zinc oxide varistors for use in lightning arresters Specification
    China Electronics Standards
  • SJ 2311-1983
  • Generic Specification for environmental test equipment for electronic industry Specification
    China Electronics Standards
  • SJ 2314-1983
  • General Specification for d. c. digital voltmeters Specification
    China Electronics Standards
  • SJ 2279-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG123 Specification
    China Electronics Standards
  • SJ 2274-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG113 Specification
    China Electronics Standards
  • SJ 2289-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151 Specification
    China Electronics Standards
  • SJ 2288-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG149 Specification
    China Electronics Standards
  • SJ 2283-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG144 Specification
    China Electronics Standards
  • SJ 2294-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG156 Specification
    China Electronics Standards
  • SJ 2291-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG153 Specification
    China Electronics Standards
  • SJ 2290-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151 Specification
    China Electronics Standards
  • SJ 2273-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG81 Specification
    China Electronics Standards
  • SJ 2293-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG155 Specification
    China Electronics Standards
  • SJ 2285-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG146 Specification
    China Electronics Standards
  • SJ 2281-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG132 Specification
    China Electronics Standards
  • SJ 2276-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114 Specification
    China Electronics Standards
  • SJ 2284-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG145 Specification
    China Electronics Standards
  • SJ 2286-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG147 Specification
    China Electronics Standards
  • SJ 2287-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Tuype 3DG148 Specification
    China Electronics Standards
  • SJ 2278-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72 Specification
    China Electronics Standards
  • SJ 2277-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG115 Specification
    China Electronics Standards
  • SJ 2292-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG154 Specification
    China Electronics Standards
  • SJ 2282-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG143 Specification
    China Electronics Standards
  • SJ 2275-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG85 Specification
    China Electronics Standards
  • SJ 2272-1983
  • Detail Specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG44 Specification
    China Electronics Standards
  • JTJ 055-1983
  • Specification for test of metals intended to be used in highway engineering Specification
    China Highway & Transportation Standards
  • SJ 2240-1982
  • Generic Specification for variable air dielectric vane trimmer capacitors Specification
    China Electronics Standards
  • SJ 2241-1982
  • Generic Specification for variable concentric trimmer capacitors Specification
    China Electronics Standards
  • SJ 2232-1982
  • Specification for metal packages of thick-film and thin-film integrated circuits Specification
    China Electronics Standards
  • SJ 2182-1982
  • Generic Specification for piezoelectric filters Specification
    China Electronics Standards
  • SJ 2131-1982
  • General Specification for clean work stations Specification
    China Electronics Standards
  • GB/T 3203-1982
  • Specification for carburizing steels of bearings Specification
    China National Standards
  • YD/T 547-1992
  • The Specification and test methods for conference telephone tandem board Specification
    China Telecommunication Standards
  • YD/T 548-1992
  • The Specification and test methods for conference telephone SET Specification
    China Telecommunication Standards
  • SJ 2093-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS36 Specification
    China Electronics Standards
  • SJ 2105-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS48 Specification
    China Electronics Standards
  • SJ 2098-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS41 Specification
    China Electronics Standards
  • SJ 2097-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS40 Specification
    China Electronics Standards
  • SJ 2096-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS39 Specification
    China Electronics Standards
  • SJ 2101-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS44 Specification
    China Electronics Standards
  • SJ 2099-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS42 Specification
    China Electronics Standards
  • SJ 2104-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS47 Specification
    China Electronics Standards
  • SJ 2095-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS38 Specification
    China Electronics Standards
  • SJ 2103-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS46 Specification
    China Electronics Standards
  • SJ 2100-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS43 Specification
    China Electronics Standards
  • SJ 2094-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS37 Specification
    China Electronics Standards
  • SJ 2102-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS45 Specification
    China Electronics Standards
  • SJ 2092-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS35 Specification
    China Electronics Standards
  • SJ 2107-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS50 Specification
    China Electronics Standards
  • SJ 2106-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS49 Specification
    China Electronics Standards
  • SJ 2108-1982
  • Detail Specification for N channel junction field-effect low power switching transistors, Type CS51 Specification
    China Electronics Standards
  • YDJ 37-1981
  • Technical Specifications for Installation engineering construction and acceptance of urban local telephone exchange equipment Specification
    China Telecommunication Standards
  • SJ 2081-1982
  • Generic Specification for dry reed switch capsules Specification
    China Electronics Standards
  • SJ 2066-1982
  • General Specification for fine-pitch involute cylindrical gears Specification
    China Electronics Standards
  • SJ 2056-1982
  • Specification for horn electro-dynamic loudspeakers Specification
    China Electronics Standards
  • SJ 2028-1982
  • Generic Specification for directly heated positive temperature coefficient thermistors Specification
    China Electronics Standards
  • SJ 2029-1982
  • Generic Specification for visible light photoresistors Specification
    China Electronics Standards
  • SJ 1992-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS22 Specification
    China Electronics Standards
  • SJ 1980-1981
  • Detail Specification for high frequency field-effect transistors, Type CS7 Specification
    China Electronics Standards
  • SJ 1995-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS25 Specification
    China Electronics Standards
  • SJ 1983-1981
  • Detail Specification for low frequency low noise field-effect transistors, Type CS10 Specification
    China Electronics Standards
  • SJ 1977-1981
  • Detail Specification for high frequency field-effect transistors, Type CS4 Specification
    China Electronics Standards
  • SJ 1981-1981
  • Detail Specification for high frequency field-effect transistors, Type CS8 Specification
    China Electronics Standards
  • SJ 1975-1981
  • Detail Specification for low frequency field-effect transistors, Type CS2 Specification
    China Electronics Standards
  • SJ 1984-1981
  • Detail Specification for low frequency low noise field-effect transistors, Type CS11 Specification
    China Electronics Standards
  • SJ 1988-1981
  • Detail Specification for low frequency low noise field-effect transistors, Type CS15 Specification
    China Electronics Standards
  • SJ 1987-1981
  • Detail Specification for low frequency low noise field-effect transistors, Type CS14 Specification
    China Electronics Standards
  • SJ 1985-1981
  • Detail Specification for low frequency low noise field-effect transistors, Type CS12 Specification
    China Electronics Standards
  • SJ 1978-1981
  • Detail Specification for high frequency field-effect transistors, Type CS5 Specification
    China Electronics Standards
  • SJ 1979-1981
  • Detail Specification for high frequency field-effect transistors, Type CS6 Specification
    China Electronics Standards
  • SJ 2003-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS33 Specification
    China Electronics Standards
  • SJ 1991-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS21 Specification
    China Electronics Standards
  • SJ 1976-1981
  • Detail Specification for low frequency field-effect transistors, Type CS3 Specification
    China Electronics Standards
  • SJ 1982-1981
  • Detail Specification for high frequency field-effect transistors, Type CS9 Specification
    China Electronics Standards
  • SJ 1986-1981
  • Detail Specification for low frequency low noise field-effect transistors, Type CS13 Specification
    China Electronics Standards
  • SJ 1989-1981
  • Detail Specification for Nchannel junction pair field-effect transistors, Type CS19 Specification
    China Electronics Standards
  • SJ 2002-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS32 Specification
    China Electronics Standards
  • SJ 1974-1981
  • Detail Specification for low frequency field-effect transistors, Type CS1 Specification
    China Electronics Standards
  • SJ 2001-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS31 Specification
    China Electronics Standards
  • SJ 1990-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS20 Specification
    China Electronics Standards
  • SJ 2005-1982
  • Detail Specification for N channel junction pair field-effect transistors, Type CS34 Specification
    China Electronics Standards
  • SJ 1996-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS26 Specification
    China Electronics Standards
  • SJ 1994-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS24 Specification
    China Electronics Standards
  • SJ 1999-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS29 Specification
    China Electronics Standards
  • SJ 2004-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS34 Specification
    China Electronics Standards
  • SJ 1993-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS23 Specification
    China Electronics Standards
  • SJ 1997-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS27 Specification
    China Electronics Standards

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