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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "Specification" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ 2000-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS30 Specification
    China Electronics Standards
  • SJ 1998-1981
  • Detail Specification for N channel junction pair field-effect transistors, Type CS28 Specification
    China Electronics Standards
  • HG/T 3075-1982
  • The Specification for package mark, transportation and storage of adhesive products Specification
    China Chemical Industry Standards
  • YDJ 35-1981
  • Technical Specifications for Installation engineering construction and acceptance of long-distance communication open-wire carrier telephone equipment Specification
    China Telecommunication Standards
  • SJ/Z 1941-1981
  • General Specification for machining operation of special equipment for electronic industry Specification
    China Electronics Standards
  • SJ 1893-1981
  • General Specification for sockets for electronic tubes and valves and crystal units Specification
    China Electronics Standards
  • SJ 1882-1981
  • General Specification for variable air dielectric capacitors for use in radio receivers Specification
    China Electronics Standards
  • SJ 1885-1981
  • Generic Specification for compound dielectric capacitors Specification
    China Electronics Standards
  • SJ 1794-1981
  • General Specification for diffusion furnace for semiconductor device manufacturing Specification
    China Electronics Standards
  • SJ 1841-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK100 Specification
    China Electronics Standards
  • SJ 1829-1981
  • Detail Specification silicon NPN epitaxial planar low power switching transistors, Type 3DK5 Specification
    China Electronics Standards
  • SJ 1832-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK102 Specification
    China Electronics Standards
  • SJ 1833-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK103 Specification
    China Electronics Standards
  • SJ 1828-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK53 Specification
    China Electronics Standards
  • SJ 1830-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK101 Specification
    China Electronics Standards
  • SJ 1844-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK112 Specification
    China Electronics Standards
  • SJ 1831-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK28 Specification
    China Electronics Standards
  • SJ 1842-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK110 Specification
    China Electronics Standards
  • SJ 1827-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK6 Specification
    China Electronics Standards
  • SJ 1843-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK111 Specification
    China Electronics Standards
  • SJ 1834-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK104 Specification
    China Electronics Standards
  • SJ 1838-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29 Specification
    China Electronics Standards
  • SJ 1839-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK108 Specification
    China Electronics Standards
  • SJ 1840-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK14 Specification
    China Electronics Standards
  • SJ 1846-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK120 Specification
    China Electronics Standards
  • SJ 1826-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK100 Specification
    China Electronics Standards
  • SJ 1848-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK130 Specification
    China Electronics Standards
  • SJ 1847-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK121 Specification
    China Electronics Standards
  • SJ 1825-1981
  • Detail Specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK21 Specification
    China Electronics Standards
  • SJ 1845-1981
  • Detail Specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK113 Specification
    China Electronics Standards
  • SJ 1671-1980
  • Specification for low voltage d. c. regulated power supply used in radar equipment Specification
    China Electronics Standards
  • SJ 1805-1981
  • Detail Specification for silicon frequency modulated variable capacitance diodes, Type 2CC126 Specification
    China Electronics Standards
  • SJ 1804-1981
  • Detail Specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404 Specification
    China Electronics Standards
  • SJ 1806-1981
  • Detail Specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130 Specification
    China Electronics Standards
  • SJ 1807-1981
  • Detail Specification for silicon tuning variable capacitance diodes, for Type 2CC120, 2CC122 and 2CC124; 2CC220, 2CC222 and 2CC224; 2CC320, 2CC322, 2CC324; 2CC420, 2CC422 and 2CC424 Specification
    China Electronics Standards
  • SJ 1752-1981
  • General Specification for thumbwheel switches Specification
    China Electronics Standards
  • SJ 1795-1981
  • Detail Specification for 50-1000mA low current thyristors Specification
    China Electronics Standards
  • SJ 1784-1981
  • Detail Specification for silicon single phase bridge rectifiers, Type QL1-9 and QL21-28 Specification
    China Electronics Standards
  • SJ 1780-1981
  • Ordinary two-electrode sputtering ion pump--Performance Specification Specification
    China Electronics Standards
  • SJ 1624-1980
  • Generic Specification for ferrite isolators and circulators intended for applications at microwave frequency Specification
    China Electronics Standards
  • SJ 1783-1981
  • Specification for electrical vacuum ceramic parts Specification
    China Electronics Standards
  • SJ 1746-1981
  • Specification for cabinet and case for electronic industry special equipment Specification
    China Electronics Standards
  • SJ 1735-1981
  • Generic Specification for communication acoustic devices Specification
    China Electronics Standards
  • SJ 1704-1981
  • Generic Specification for power klystrons Specification
    China Electronics Standards
  • SJ 1944-1981
  • Detail Specification for high voltage silicon rectifier stacks, Type 2CL30~33, 2DL30~33, 2CL40~43 and 2DL40~43 Specification
    China Electronics Standards
  • SJ 1947-1981
  • Detail Specification for silicon power rectifier diodes, Type 2CZ32B, 2DZ32B, 2CZ33B and 2DZ33B Specification
    China Electronics Standards
  • SJ 1948-1981
  • Detail Specification for high frequency rectifier diodes, Types 2CZ90D~90J, 2DZ90D~90J, 2CZ91D~91J, 2DZ91D~91J, 2CZ92D~92J and 2DZ92D~92J Specification
    China Electronics Standards
  • SJ 1946-1981
  • Detail Specification for silicon voltage booster diodes, Type 2CN4C, 2DN4C, 2CN5C and 2DN5C Specification
    China Electronics Standards
  • SJ 1945-1981
  • Detail Specification for silicon damper diodes, Types 2CN1D~2D, 2DN1D~2D, 2CN3D~3K, 2DN3D~3K, 2CN6D~6K and 2DN6D~6K Specification
    China Electronics Standards
  • JC/T 192-1981
  • Specification for inspection, packaging and storage of quartz glass Specification
    China Building Materials Standards
  • SJ 1683-1980
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA152 Specification
    China Electronics Standards
  • SJ 1690-1980
  • Detail Specification for silicon NPN low-frequency high power transistors, Type 3DD206 Specification
    China Electronics Standards
  • SJ 1692-1980
  • Detail Specification for silicon NPN low-frequency high power transistors, Type 3DD208 Specification
    China Electronics Standards
  • SJ 1686-1980
  • Detail Specification for silicon NPN low-frequency high power transistors, Type 3DD202 Specification
    China Electronics Standards
  • SJ 1682-1980
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA151 Specification
    China Electronics Standards
  • SJ 1693-1980
  • Detail Specification for silicon PNP low-frequency high power transistors, Type 3AD150 Specification
    China Electronics Standards
  • SJ 1689-1980
  • Detail Specification for silicon NPN low-frequency high power transistors, Type 3DD205 Specification
    China Electronics Standards
  • SJ 1672-1980
  • Detail Specification for silicon NPN forward AGC high frequency low power transistors, Type 3DG253 Specification
    China Electronics Standards
  • SJ 1673-1980
  • Detail Specification for silicon NPN forward AGC high frequency low power transistors, Type 3DG254 Specification
    China Electronics Standards
  • SJ 1674-1980
  • Detail Specification for silicon NPN image intermediate frequency amplification end-use transistors, Type 3DG255 Specification
    China Electronics Standards
  • SJ 1641-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD162 and 3DD163 Specification
    China Electronics Standards
  • SJ 1638-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD155 and 3DD156 Specification
    China Electronics Standards
  • SJ 1647-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD253 and 3D Specification
    China Electronics Standards
  • SJ 1648-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD255 and 3DD256 Specification
    China Electronics Standards
  • SJ 1654-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD270, 3DD271 and 3Dd272 Specification
    China Electronics Standards
  • SJ 1652-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD264, 3DD265 and 3DD266 Specification
    China Electronics Standards
  • SJ 1651-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD262 and 3DD263 Specification
    China Electronics Standards
  • SJ 1639-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD157 and 3DD158 Specification
    China Electronics Standards
  • SJ 1646-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD175 and 3DD176 Specification
    China Electronics Standards
  • SJ 1649-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD257 and 3DD258 Specification
    China Electronics Standards
  • SJ 1650-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD259, 3DD260 and 3DD261 Specification
    China Electronics Standards
  • SJ 1637-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD153 and 3DD154 Specification
    China Electronics Standards
  • SJ 1636-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD151 and 3DD152 Specification
    China Electronics Standards
  • SJ 1643-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD167, 3DD168 and 3DD169 Specification
    China Electronics Standards
  • SJ 1644-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD170, 3DD171 and 3DD172 Specification
    China Electronics Standards
  • SJ 1642-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD164, 3DD165 and 3DD166 Specification
    China Electronics Standards
  • SJ 1640-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD159, 3DD160 and 3DD161 Specification
    China Electronics Standards
  • SJ 1655-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD275 and 3DD276 Specification
    China Electronics Standards
  • SJ 1645-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD173 and 3DD174 Specification
    China Electronics Standards
  • SJ 1653-1980
  • Detail Specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD267, 3DD268 and 3DD269 Specification
    China Electronics Standards
  • SJ 1669-1981
  • Specification for wire MODEMs Specification
    China Electronics Standards
  • SJ 280-1980
  • General Specification for electronic equipment vehicles Specification
    China Electronics Standards
  • JGJ 5-1980
  • Specification for design and construction of middlesized block buildings Specification
    China Building & Construction Standards
  • SJ 1468-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG100 Specification
    China Electronics Standards
  • JGJ 4-1980
  • Specification for design and construction of poured-pile foundations of industrial and civil buildings Specification
    China Building & Construction Standards
  • SJ 1583-1980
  • General Specification for glass dielectric trimmer capacitors Specification
    China Electronics Standards
  • SJ 1557-1980
  • General Specification for indirectly heated temperature coefficient themistors Specification
    China Electronics Standards
  • SJ 1559-1980
  • Generic Specification for negative temperature coefficient thermistors used as voltage regulators Specification
    China Electronics Standards
  • SJ 1553-1980
  • General Specification for negative temperature coefficient thermistors for temperature measurement Specification
    China Electronics Standards
  • SJ/T 198-1980
  • General Specification for counting tubes Specification
    China Electronics Standards
  • SJ 1521-1979
  • General Specification for toggle lever switches Specification
    China Electronics Standards
  • SJ 1457-1979
  • General Specification for general purpose low and medium speed electronic counters Specification
    China Electronics Standards
  • JGJ 2-1979
  • Specification for design and construction of factory building wall panels Specification
    China Building & Construction Standards
  • SJ 1478-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG121 Specification
    China Electronics Standards
  • SJ 1473-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG111 Specification
    China Electronics Standards
  • SJ 1485-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors, Type 3CG170 Specification
    China Electronics Standards
  • SJ 1476-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG114 Specification
    China Electronics Standards
  • SJ 1475-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG113 Specification
    China Electronics Standards
  • SJ 1471-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG103 Specification
    China Electronics Standards
  • SJ 1481-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG131 Specification
    China Electronics Standards

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