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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "Specification" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ 1481-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG131 Specification
    China Electronics Standards
  • SJ 1477-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG120 Specification
    China Electronics Standards
  • SJ 1470-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG102 Specification
    China Electronics Standards
  • SJ 1484-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors, Type 3CG160 Specification
    China Electronics Standards
  • SJ 1483-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power noise transistors, Type 3CG140 Specification
    China Electronics Standards
  • SJ 1486-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors, Type 3CG180 Specification
    China Electronics Standards
  • SJ 1469-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG101 Specification
    China Electronics Standards
  • SJ 1474-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG112 Specification
    China Electronics Standards
  • SJ 1472-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG110 Specification
    China Electronics Standards
  • SJ 1482-1979
  • Detail Specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG132 Specification
    China Electronics Standards
  • SJ 1487-1979
  • Detail Specification for reverse blocking high-frequency thyristors Specification
    China Electronics Standards
  • SJ 1430-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA89 Specification
    China Electronics Standards
  • SJ 1411-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA5 Specification
    China Electronics Standards
  • SJ 1409-1978
  • Detail Specification for silicon NPN high-frequency high pwer transistors, Type 3DA3 Specification
    China Electronics Standards
  • SJ 1425-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA106 Specification
    China Electronics Standards
  • SJ 1385-1978
  • General Specification for noise-generator diodes and gas discharge noise tubes Specification
    China Electronics Standards
  • SJ 1424-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA105 Specification
    China Electronics Standards
  • SJ 1427-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA92 Specification
    China Electronics Standards
  • SJ 1421-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA22 Specification
    China Electronics Standards
  • SJ 1428-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA107 Specification
    China Electronics Standards
  • SJ 1414-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA102 Specification
    China Electronics Standards
  • SJ 1426-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA21 Specification
    China Electronics Standards
  • SJ 1408-1978
  • Detail Specification for silicon NPN high frequency high power transistors, Type 3DA101 Specification
    China Electronics Standards
  • SJ 1417-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA103 Specification
    China Electronics Standards
  • SJ 1429-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA108 Specification
    China Electronics Standards
  • SJ 1431-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA39 Specification
    China Electronics Standards
  • SJ 1406-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA96 Specification
    China Electronics Standards
  • SJ 1405-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA1 Specification
    China Electronics Standards
  • SJ 1423-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA32 Specification
    China Electronics Standards
  • SJ 1420-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA104 Specification
    China Electronics Standards
  • SJ 1418-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA10 Specification
    China Electronics Standards
  • SJ 1412-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA14 Specification
    China Electronics Standards
  • SJ 1416-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA100 Specification
    China Electronics Standards
  • SJ 1407-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA4 Specification
    China Electronics Standards
  • SJ 1419-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA18 Specification
    China Electronics Standards
  • SJ 1413-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA2 Specification
    China Electronics Standards
  • SJ 1415-1978
  • Detail Specification for silicon NPN high-frequency high power transistors, Type 3DA28 Specification
    China Electronics Standards
  • JGJ 54-1979
  • Technical Specification for water-reducer admixtures of calcium lignosulphonate using in concrete Specification
    China Building & Construction Standards
  • JGJ 9-1978
  • Specification for design and construction of hydraulic and removable formwork project Specification
    China Building & Construction Standards
  • TB 1335-1978
  • (Railway Vehicle Identification strength design and test Specifications) Specification
    China Railway & Train Standards
  • SJ 1227-1977
  • Detail Specification for germanium detector diodes, Type 2AP1~2AP8, 2AP21 and 2AP27 Specification
    China Electronics Standards
  • SJ 1226-1977
  • Detail Specification for germanium detector diodes, Type 2AP9~2AP10 Specification
    China Electronics Standards
  • SJ 1228-1977
  • Detail Specification for germanium wideband detector diodes, Type 2AP30~2AP31 Specification
    China Electronics Standards
  • SJ 1229-1977
  • Detail Specification for germanium switching diodes, Type 2AK1~20 Specification
    China Electronics Standards
  • SJ 1225-1977
  • Detail Specification for germanium detector diodes, Type 2AP11~2AP17 Specification
    China Electronics Standards
  • SJ 1152-1977
  • Specification for electronic temperature meters for cereal grains Specification
    China Electronics Standards
  • SJ 1241-1977
  • Generic Specification for paper dielectic capacitors Specification
    China Electronics Standards
  • SJ 1130-1977
  • Detail Specification for high-voltage silicon rectifier stacks, Type 2DL51~56 and 2CL51~56 Specification
    China Electronics Standards
  • SJ 1102-1976
  • Detail Specification for general-purpose reverse blocking thyristors (general-purpose controlled rectifiers) Specification
    China Electronics Standards
  • SJ 936-1975
  • Detail Specification for silicon NPN low frequency high power high reverse voltage transistors, Type 3DD103 and 3DD104 Specification
    China Electronics Standards
  • SJ 934-1975
  • Detail Specification for silicon NPN low frequency high power high reversse voltage transistors, Type 3DD100 Specification
    China Electronics Standards
  • SJ 935-1975
  • Detail Specification for silicon NPN low frequency high power high reverse voltage transistors, Type 3DD101 and 3DD102 Specification
    China Electronics Standards
  • SB 10-1976
  • (The method of preparation of design Specification) Specification
    China Commerce Standards
  • HG 2-889-1976
  • (Toxaphene emulsion technical Specifications) Specification
    China Chemical Industry Standards
  • SJ 910-1974
  • Detail Specification for silicon voltage regulator diodes, Type 3DW50~202 Specification
    China Electronics Standards
  • SJ 911-1974
  • Detail Specification for silicon planar temperature compensation voltage regulator diodes, Type 2DW230~236 Specification
    China Electronics Standards
  • SJ 909-1974
  • Detail Specification for silicon voltage regulator diodes, Type 2CW50~149 Specification
    China Electronics Standards
  • HG 2-822-1975
  • (Phosmet EC technical Specifications) Specification
    China Chemical Industry Standards
  • SJ 800-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG180 Specification
    China Electronics Standards
  • SJ 774-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD64 Specification
    China Electronics Standards
  • SJ 773-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD62 and 3DD63 Specification
    China Electronics Standards
  • SJ 770-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD58 Specification
    China Electronics Standards
  • SJ 767-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD53 and 3DD54 Specification
    China Electronics Standards
  • SJ 780-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD72 Specification
    China Electronics Standards
  • SJ 772-1974
  • Detail Specification for silion NPN alloy diffused low-frequency high power transistors, Type 3DD61 Specification
    China Electronics Standards
  • SJ 768-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD55 Specification
    China Electronics Standards
  • SJ 766-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD52 Specification
    China Electronics Standards
  • SJ 771-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD59 and 3DD60 Specification
    China Electronics Standards
  • SJ 783-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG101 Specification
    China Electronics Standards
  • SJ 765-1974
  • Detail Specification for silicon NPN eqitaxial planar low-frequency high power transistors, Type 3DD50 and 3DD51 Specification
    China Electronics Standards
  • SJ 790-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG121 Specification
    China Electronics Standards
  • SJ 801-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG181 Specification
    China Electronics Standards
  • SJ 795-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG142 Specification
    China Electronics Standards
  • SJ 799-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors, Type 3DG170 Specification
    China Electronics Standards
  • SJ 775-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD65 and 3DD66 Specification
    China Electronics Standards
  • SJ 797-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG161 Specification
    China Electronics Standards
  • SJ 777-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD68 and 3DD69 Specification
    China Electronics Standards
  • SJ 778-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD70 Specification
    China Electronics Standards
  • SJ 791-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG122 Specification
    China Electronics Standards
  • SJ 781-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD73 Specification
    China Electronics Standards
  • SJ 796-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG160 Specification
    China Electronics Standards
  • SJ 786-1974
  • Detail Specification for silicon NPN planar high frequency low power transistors, Type 3DG110 Specification
    China Electronics Standards
  • SJ 787-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG111 Specification
    China Electronics Standards
  • SJ 769-1974
  • Detail Specification for silion NPN epitaxial planar low-frequency high power transistors, Type 3DD56 and 3DD57 Specification
    China Electronics Standards
  • SJ 785-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG103 Specification
    China Electronics Standards
  • SJ 784-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG102 Specification
    China Electronics Standards
  • SJ 779-1974
  • Detail Specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD71 Specification
    China Electronics Standards
  • SJ 776-1974
  • Detail Specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD67 Specification
    China Electronics Standards
  • SJ 788-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG112 Specification
    China Electronics Standards
  • SJ 789-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG120 Specification
    China Electronics Standards
  • SJ 794-1974
  • Detail Specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG141 Specification
    China Electronics Standards
  • SJ 737-1983
  • General Specification for rotary wafer switches (low current rating) Specification
    China Electronics Standards
  • SJ 347-1973
  • Generic Specification for reflex klystrons Specification
    China Electronics Standards
  • SJ 332-1973
  • Generic Specification for receiving tubes, high reliability, subminiature and finger-shaped Specification
    China Electronics Standards
  • SJ 338-1973
  • General Specification for high-voltage rectifier tubes Specification
    China Electronics Standards
  • SJ 343-1973
  • Generic Specification for gas-filled microwave switching tubes Specification
    China Electronics Standards
  • SJ 345-1973
  • General Specification for power travelling wave tubes Specification
    China Electronics Standards
  • SJ 344-1973
  • General Specification for low noise travelling wave tubes Specification
    China Electronics Standards
  • SJ 346-1973
  • General Specification for O-Type backward wave tubes Specification
    China Electronics Standards
  • BJG 13-1964
  • Specification for manufacturing and application of steam-curing flyash concrete masonry Specification
    China Building & Construction Standards

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