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  •  China "Transistor" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ/T 1477-2016
  • (Discrete semiconductor devices 3CG120 high frequency low power silicon PNP Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1486-2016
  • (Discrete semiconductor devices 3CG180 silicon PNP frequency high power Transistor backpressure small detail specification) Transistor
    China Electronics Standards
  • SJ/T 1831-2016
  • (Semiconductor discrete device 3DK28 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1472-2016
  • (Discrete semiconductor devices 3CG110 high frequency low power silicon PNP Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1826-2016
  • (Semiconductor discrete device 3DK100 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1480-2016
  • (Discrete semiconductor devices 3CG130 high frequency low power silicon PNP Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1838-2016
  • (Semiconductor discrete device 3DK29 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1839-2016
  • (Semiconductor discrete device 3DK108 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1833-2016
  • (Semiconductor discrete device 3DK103 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1834-2016
  • (Semiconductor discrete device 3DK104 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1830-2016
  • (Semiconductor discrete device 3DK101 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • SJ/T 1832-2016
  • (Semiconductor discrete device 3DK102 silicon NPN low power switching Transistor detailed specification) Transistor
    China Electronics Standards
  • GB/T 10067.34-2015
  • Basic specifications for electroheat installations—Part 34:Transistor type high frequency induction heating installation Transistor
    China National Standards
  • GB 51136-2015
  • Code for design of thin film Transistor liquid crystal display plant Transistor
    China National Standards
  • GB/T 31958-2015
  • Substrate glass for thin film Transistor liquid crystal display device Transistor
    China National Standards
  • SJ/T 11516-2015
  • Specification for thin film Transistor (TFT) mask Transistor
    China Electronics Standards
  • SJ/T 2214-2015
  • Measuring methods for semiconductor photodiode and photoTransistor Transistor
    China Electronics Standards
  • SJ/T 2217-2014
  • (Silicon photoTransistor technical specifications) Transistor
    China Electronics Standards
  • GB/T 29332-2012
  • Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar Transistors(IGBT) Transistor
    China National Standards
  • HG/T 4357-2012
  • Polarizer for the thin film Transistor-Liquid crystal display(TFT-LCD) Transistor
    China Chemical Industry Standards
  • SJ 50033/172-2007
  • Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/173-2007
  • Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/176-2007
  • Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/175-2007
  • Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/170-2007
  • Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/171-2007
  • Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/174-2007
  • Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • GB/T 21039.1-2007
  • Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and Transistors - Microwave field effect transistors - Blank detail specification Transistor
    China National Standards
  • JJG(SJ)310007-2006
  • Speciation for verification of DC parameter testing system for isolated gate bipolar Transistors Transistor
    China Metrological Standards
  • JJG 310007-2006
  • Speciation for verification of DC parameter testing system for isolated gate bipolar Transistors Transistor
    China Metrological Standards
  • JJG(SJ)310004-2006
  • Specification for verification of Transistor h parameter testers Transistor
    China Metrological Standards
  • JJG 310004-2006
  • Specification for verification of Transistor h parameter testers Transistor
    China Metrological Standards
  • SJ 50033/169-2004
  • Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/168-2004
  • Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/166-2004
  • Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/167-2004
  • Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/163-2003
  • Semiconductor discrete device. Detail specification of type 3DK457 for power switching Transistors Transistor
    China Electronics Standards
  • SN/T 1175-2003
  • Methods for the inspection of thin film Transistor color liquid crystal display devices for import and export Transistor
    China Import Export Inspection Standards
  • SJ 50033/160-2002
  • Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power Transistor Transistor
    China Electronics Standards
  • SJ 50033/158-2002
  • Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise Transistor Transistor
    China Electronics Standards
  • SJ 50033/154-2002
  • Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise Transistor Transistor
    China Electronics Standards
  • SJ 50033/157-2002
  • Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50033/159-2002
  • Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise Transistor Transistor
    China Electronics Standards
  • SJ 50033/155-2002
  • Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity Transistor Transistor
    China Electronics Standards
  • SJ 50033/156-2002
  • Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 50597/53-2000
  • Semiconductor integrated circuits. Detail specification for Type JB3081, JB3082 Transistor arrays Transistor
    China Electronics Standards
  • SJ 50033/146-2000
  • Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power Transistor Transistor
    China Electronics Standards
  • SJ 50033/145-2000
  • Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • SJ 20789-2000
  • Rapid screening test methods for Thermal sensitive parameter of MOS field effect Transistor Transistor
    China Electronics Standards
  • SJ 50033/148-2000
  • Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching Transistors Transistor
    China Electronics Standards
  • SJ/T 11225-2000
  • Detail specification for electronic components Type 3DA504 S band silicon pulse power Transistor Transistor
    China Electronics Standards
  • SJ/T 11227-2000
  • Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power Transistor Transistor
    China Electronics Standards
  • SJ/T 11226-2000
  • Detail specification for electronic components Type 3DA505 L band silicon pulse power Transistor Transistor
    China Electronics Standards
  • YD/T 527-1992
  • (12-channel Transistor agriculture cable carrier telephone equipment) Transistor
    China Telecommunication Standards
  • SJ 50033/140-1999
  • Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power Transistor Transistor
    China Electronics Standards
  • GB/T 6217-1998
  • Semiconductor devices--Discrete devices--Part 7:Bipolar Transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification Transistor
    China National Standards
  • GB/T 7576-1998
  • Semiconductor devices--Discrete devices--Part 7:Bipolar Transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification Transistor
    China National Standards
  • GB/T 6219-1998
  • Semiconductor devices--Discrete devices--Part 8:Field-effect Transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz Transistor
    China National Standards
  • SJ 50033/120-1997
  • Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect Transistor Transistor
    China Electronics Standards
  • SJ 50033/131-1997
  • Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power Transistor Transistor
    China Electronics Standards
  • SJ 50033/130-1997
  • Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power Transistor Transistor
    China Electronics Standards
  • SJ 50033/119-1997
  • Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect Transistor Transistor
    China Electronics Standards
  • SJ 50033/121-1997
  • Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect Transistors Transistor
    China Electronics Standards
  • SJ 50033/132-1997
  • Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power Transistor Transistor
    China Electronics Standards
  • SJ 50033/134-1997
  • Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power Transistor Transistor
    China Electronics Standards
  • SJ 50033/129-1997
  • Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power Transistor Transistor
    China Electronics Standards
  • SJ 50033/122-1997
  • Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect Transistors Transistor
    China Electronics Standards
  • SJ/T 10792-1996
  • Detailed specifications for electronic components - 33DX201A, 3DX201B and 3DX201C ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10971-1996
  • Detailed specifications for electronic components - 3DD204 silicon NPN case-rated Transistors for low frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 11056-1996
  • Detailed specifications for electronic components - 4CS1191 high frequency silicon dual insulated-gate field-effect Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10975-1996
  • Detailed specifications for electronic components - 3CG1825 silicon NPN ambient-rated Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10790-1996
  • Detailed specifications for electronic components - 3CG21B and 3CG21C ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10960-1996
  • Detailed specifications for electronic components - 3CG844 silicon PNP ambient-rated Transistors for high frequency amplification Transistor
    China Electronics Standards
  • SJ/T 10961-1996
  • Detailed specifications for electronic components - 3CG778 silicon PNP ambient-rated Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10955-1996
  • Detailed specifications for electronic components - 3DG107 ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10772-1996
  • Detailed specifications for electronic components - 3DG201C ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10770-1996
  • Detailed specifications for electronic components - 3DG130A-3DG130D ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10836-1996
  • Detailed specifications for electronic components - 3DK107A and 3DK107B bipolar switching Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10837-1996
  • Detailed specifications for electronic components -3DG131A, 3DG131B and 3DG131C ambient-rated bipolar Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10833-1996
  • Detailed specifications for electronic components - 3DG80 ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10773-1996
  • Detailed specifications for electronic components - 3DK106A and 3DK106B bipolar switching Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10957-1996
  • Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10771-1996
  • Detailed specifications for electronic components - 3DG111B (111C, 111E and 111F) ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10962-1996
  • Detailed specifications for electronic components - 3DA1514 silicon NPN ambient-rated Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10835-1996
  • Detailed specifications for electronic components - 3DK105A and 3DK105B bipolar switching Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10791-1996
  • Detailed specifications for electronic components - 3CX2014A, 3CX201B and 3CX201C ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10963-1996
  • Detailed specifications for electronic components - 3DG2271 silicon NPN ambient-rated Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10956-1996
  • Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10834-1996
  • Detailed specifications for electronic components - CS111, CS112, CS113, CS114, CS115 and CS116 single-gate junction field-effect Transistors (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10788-1996
  • Detailed specifications for electronic components - 3DG79 forward AGC low-noise Transistor for high-frequency (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10966-1996
  • Detailed specifications for electronic components - 3DD100C silicon NPN case-rated Transistors for low frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10967-1996
  • Detailed specifications for electronic components - 3DD203 silicon NPN case-rated Transistors for low frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10969-1996
  • Detailed specifications for electronic components - 3DG2636 silicon NPN ambient-rated Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10972-1996
  • Detailed specifications for electronic components - 3DD207 silicon NPN case-rated Transistors for low frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10973-1996
  • Detailed specifications for electronic components - 3DD200 bipolar Transistors for silicon NPN low frequency amplification case (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10974-1996
  • Detailed specifications for electronic components - 3DD325 silicon NPN ambient-rated Transistors for low frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 11053-1996
  • Detailed specifications for electronic components - 3DG182 ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 10968-1996
  • Detailed specifications for electronic components - 3DD205A silicon NPN case-rated Transistors for high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 11052-1996
  • Detailed specifications for electronic components - 3DG162 ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards
  • SJ/T 11054-1996
  • Detailed specifications for electronic components - 3DG140 ambient-rated bipolar Transistors for low and high frequency amplification (Applicable for certification) Transistor
    China Electronics Standards

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