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  •  China "diodes" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ/T 2658.15-2016
  • (The semiconductor infrared emitting diodes measuring methods - Part 15: Thermal resistance) diodes
    China Electronics Standards
  • SJ/T 2658.14-2016
  • (The semiconductor infrared emitting diodes measuring methods - Part 14: Junction Temperature) diodes
    China Electronics Standards
  • SJ/T 2658.16-2016
  • (The semiconductor infrared emitting diodes measuring methods - Part 16: photoelectric conversion efficiency) diodes
    China Electronics Standards
  • QC/T 1038-2016
  • (Cars with light-emitting diodes (LED) and modules) diodes
    China Automobile & Vehicle industry Standards
  • SJ/T 11624-2016
  • (Light emitting diode (LED) display with light-emitting diodes Specification) diodes
    China Electronics Standards
  • GB/T 4023-2015
  • Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes diodes
    China National Standards
  • SJ/T 2354-2015
  • Measuring methods for photodiodes of PIN, APD diodes
    China Electronics Standards
  • GB/T 14863-2013
  • Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes diodes
    China National Standards
  • SJ/T 11393-2009
  • Semiconductor optoelectronic devices. Blank detail specification for power light-emitting diodes diodes
    China Electronics Standards
  • SJ/T 11400-2009
  • Semiconductor optoelectronic devices. Blank detail specification for lower-power light-emitting diodes diodes
    China Electronics Standards
  • SJ/T 11394-2009
  • Measure methods of semiconductor light emitting diodes diodes
    China Electronics Standards
  • SJ/T 11401-2009
  • Series program for semiconductor light emitting diodes diodes
    China Electronics Standards
  • SJ/T 11399-2009
  • Measurement methods for chips of light emitting diodes diodes
    China Electronics Standards
  • SJ/T 11397-2009
  • Phosphors for light emitting diodes diodes
    China Electronics Standards
  • GB/T 23729-2009
  • Photodiodes for scintillation detectors - Test procedures diodes
    China National Standards
  • GB/T 21039.1-2007
  • Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification diodes
    China National Standards
  • SJ 50033/162-2003
  • Semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes diodes
    China Electronics Standards
  • GB/T 18904.5-2003
  • Semiconductor devices--Part 12-5: Optoelectronic devices--Blank detail specification for pin-photodiodes with/without pigtail,for fibre optic systems or subsystems diodes
    China National Standards
  • GB/T 18904.2-2002
  • Semiconductor devices--Part 12-2:Optoelectronic devices--Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems diodes
    China National Standards
  • GB/T 18904.1-2002
  • Semiconductor devices--Part 12-1:Optoelectronic devices--Blank detail specification for light emitting/infrared emitting diodes with/without pigtail for fiber optic systems or sub-systems diodes
    China National Standards
  • GB/T 18904.3-2002
  • Semiconductor devices--Part 12-3:Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application diodes
    China National Standards
  • GB/T 6589-2002
  • Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes) diodes
    China National Standards
  • SJ 50033/151-2002
  • Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 diodes
    China Electronics Standards
  • SJ 20788-2000
  • Measurment method for thermal impedance of semiconductor diodes diodes
    China Electronics Standards
  • SJ 50033/149-2000
  • Semiconductr discrete devices. Detail specification for type 2CW100~121 glass passivation package sillcon voltage-requlator diodes diodes
    China Electronics Standards
  • GB/T 6588-2000
  • Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes diodes
    China National Standards
  • SJ 50033/144-1999
  • Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes diodes
    China Electronics Standards
  • GB/T 6351-1998
  • Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A diodes
    China National Standards
  • GB/T 4023-1997
  • Semiconductor devices--Discrete devices and integrated circuits--Part 2:Rectifier diodes diodes
    China National Standards
  • GB/T 16894-1997
  • Blank detail specification for rectifier diodes (including avalanche rectifier diodes),ambient and case-rated,for currents greater than 100A diodes
    China National Standards
  • SJ 50033/123-1997
  • Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 diodes
    China Electronics Standards
  • SJ 50033/125-1997
  • Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 diodes
    China Electronics Standards
  • SJ 50033/133-1997
  • Semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes diodes
    China Electronics Standards
  • SJ 50033/124-1997
  • Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 diodes
    China Electronics Standards
  • SJ/T 10951-1996
  • Detailed specifications for electronic components - 2CZ33 ambient-rated silicon rectifier diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10838-1996
  • Detailed specifications for electronic components - 2CZ201, 2CZ202 and 2CZ203 switching rectifier diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10949-1996
  • Detailed specifications for electronic components - 2CZ321 ambient-rated silicon rectifier diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10779-1996
  • Detailed specifications for electronic components - 2CN41 silicon fast-switching rectifier diodes - Assessment level E (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10952-1996
  • Detailed specifications for electronic components - 2CZ323 ambient-rated silicon rectifier diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10950-1996
  • Detailed specifications for electronic components - 2CZ322 ambient-rated silicon rectifier diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10979-1996
  • Detailed specifications for electronic components - 2CC22 and 2CC27 silicon tuning variable capacitance diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10953-1996
  • Detailed specifications for electronic components - 2CZ324Q ambient-rated silicon rectifier diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10992-1996
  • Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10980-1996
  • Detailed specifications for electronic components - 2CC23 and 2CC28 silicon tuning variable capacitance diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10977-1996
  • Detailed specifications for electronic components - 2CK111, 2CK112 and 2CK113 silicon switching diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10981-1996
  • Detailed specifications for electronic components - 2CC24 and 2CC29 silicon tuning variable capacitance diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10982-1996
  • Detailed specifications for electronic components -2CC25 and 2CC30 silicon band variable capacitance diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10948-1996
  • Detailed specifications for electronic components - FG313052, FG314053, FG313054 and FG314055 semiconductor red light emitting diodes diodes
    China Electronics Standards
  • SJ/T 10978-1996
  • Detailed specifications for electronic components - 2CC21 and 2CC26 silicon tuning variable capacitance diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ/T 10947-1996
  • Detailed specifications for electronic components - FG341052 and FG343053 semiconductor green light emitting diodes diodes
    China Electronics Standards
  • SJ/T 10993-1996
  • Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification) diodes
    China Electronics Standards
  • SJ 50033/113-1996
  • Semiconductor discrete device. Detail specification for type GD3252Y photodiodes diodes
    China Electronics Standards
  • SJ 50033/112-1996
  • Semiconductor discrete device. Detail specification for type GD3251Y photodiodes diodes
    China Electronics Standards
  • SJ 50033/108-1996
  • Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672 diodes
    China Electronics Standards
  • SJ 50033/109-1996
  • Semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes diodes
    China Electronics Standards
  • SJ 50033/107-1996
  • Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623 diodes
    China Electronics Standards
  • SJ/T 10696-1996
  • Semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules diodes
    China Electronics Standards
  • SJ 50033/98-1995
  • Semiconductor discrete device. Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes diodes
    China Electronics Standards
  • SJ 50033/97-1995
  • Semiconductor discrete device. Detail specification for type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes diodes
    China Electronics Standards
  • SJ 50033/100-1995
  • Semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes diodes
    China Electronics Standards
  • YD/T 835-1996
  • Test method of avalanche photodiodes diodes
    China Telecommunication Standards
  • YD/T 834-1996
  • Test method of distributed feedback laser diodes diodes
    China Telecommunication Standards
  • SJ/Z 9169-1995
  • Specifications for determination of 2CZ185 type (MA185-TA5) low-power rectifier diodes and similar products used for VCR diodes
    China Electronics Standards
  • GB/T 15649-1995
  • Blank detail specification for semiconductor laser diodes diodes
    China National Standards
  • GB/T 6571-1995
  • Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes diodes
    China National Standards
  • SJ 50033/5-1994
  • Semiconductor discrete device. Detail specification for semiconductor yellow light emmitting diodes for type GF311 of GP and GT classes diodes
    China Electronics Standards
  • SJ 50033/28-1994
  • Semiconductor discrete device. Detail specification stripline mixer diodes for 2CV334, 2CV3338 diodes
    China Electronics Standards
  • SJ 50033/6-1994
  • Semiconductor discrete device. Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes diodes
    China Electronics Standards
  • SJ 50033/27-1994
  • Semiconductor discrete device. Detail specification for GaAs varactor diodes for 2EC600 series diodes
    China Electronics Standards
  • SJ 50033.49-1994
  • Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series diodes
    China Electronics Standards
  • SJ 50033/4-1994
  • Semiconductor discrete device. Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes diodes
    China Electronics Standards
  • SJ 20187-1992
  • Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 diodes
    China Electronics Standards
  • SJ 20186-1992
  • Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 diodes
    China Electronics Standards
  • SJ 20185-1992
  • Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236 diodes
    China Electronics Standards
  • SJ 20188-1992
  • Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 diodes
    China Electronics Standards
  • SJ/T 10062-1991
  • Detail specification for electronic components. Microstric silicon switching PIN diodes for types PIN 40A, PIN40B and PIN40C diodes
    China Electronics Standards
  • SJ/T 10061-1991
  • Detail specification for electronic components. Silicon schottky barrier mixer diodes for types 2CV3A, 2CV3B and 2CV3G diodes
    China Electronics Standards
  • SJ/T 10063-1991
  • Detail specification for electronic components. Silicon switching PIN diodes for types PIN 62A, PIN62B PIN62C and PIN62D diodes
    China Electronics Standards
  • SJ/T 10031-1991
  • Detail specification for electronic component currect regulator diodes for types 2DH1~14 diodes
    China Electronics Standards
  • JJG(SJ)04044-1991
  • (YWS2980A rectifier diodes I and I t tester test procedures) diodes
    China Metrological Standards
  • SJ 2749-1987
  • Method of measurement for semiconductor laser diodes diodes
    China Electronics Standards
  • SJ 2747-1987
  • Blank detail specification for step-function recovery diodes diodes
    China Electronics Standards
  • SJ 2750-1987
  • Outline dimensions for semiconductor laser diodes diodes
    China Electronics Standards
  • SJ 2720-1986
  • Detail specification for silicon medium speed switching recitifier diodes, Type 2CZ304 diodes
    China Electronics Standards
  • SJ 2717-1986
  • Detail specification for silicon general purpose rectifier diodes, Type 2CZ301 diodes
    China Electronics Standards
  • SJ 2722-1986
  • Detail specification for silicon high speed switching rectifier diodes, Type 2CZ306 diodes
    China Electronics Standards
  • SJ 2721-1986
  • Detail specification for silicon high speed switching rectifier diodes, Type 2CZ305 diodes
    China Electronics Standards
  • SJ 2719-1986
  • Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ204 and 2CZ205 diodes
    China Electronics Standards
  • SJ 2718-1986
  • Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ302 diodes
    China Electronics Standards
  • SJ 2724-1986
  • Detail specification for silicon high speed switching rectifier diodes, Type 2CZ308 diodes
    China Electronics Standards
  • SJ 2729-1986
  • Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ315 diodes
    China Electronics Standards
  • SJ 2728-1986
  • Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ314 diodes
    China Electronics Standards
  • SJ 2723-1986
  • Detail specification for silicon high speed switching rectifier diodes, Type 2CZ307 diodes
    China Electronics Standards
  • SJ 2726-1986
  • Detail specification for general purpose silicon rectifier diodes, Type 2CZ312 diodes
    China Electronics Standards
  • SJ 2727-1986
  • Detail specification for general purpose silicon rectifier diodes, Type 2CZ313 diodes
    China Electronics Standards
  • SJ 2730-1986
  • Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ316 diodes
    China Electronics Standards
  • SJ 2725-1986
  • Detail specification for general purpose silicon rectifier diodes, Type 2CZ311 diodes
    China Electronics Standards
  • SJ 2732-1986
  • Detail specification for silicon high speed switching rectifier diodes, Type 2CZ318 diodes
    China Electronics Standards
  • SJ 2658.3-1986
  • Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage diodes
    China Electronics Standards
  • SJ 2658.13-1986
  • Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power temperature coefficient diodes
    China Electronics Standards

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