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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards; We provide Chinese GB standards and English version GB standards Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services. |
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43612-2023 |
Silicon carbide crystal material defect map 碳化硅晶体材料缺陷图谱 |
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| GB/T 43607-2023 |
Palladium ingot analysis method Determination of silver, aluminum, gold, bismuth, chromium, copper, iron, iridium, magnesium, manganese, nickel, lead, platinum, rhodium, ruthenium, silicon, tin, zinc content Spark discharge atomic emission spectrometry 钯锭分析方法 银、铝、金、铋、铬、铜、铁、铱、镁、锰、镍、铅、铂、铑、钌、硅、锡、锌含量测定 火花放电原子发射光谱法 |
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| GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 |
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| GB/T 43493.2-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法 |
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| GB/T 43493.1-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类 |
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| GB/T 2881-2023 |
Industrial silicon 工业硅 |
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| GB/T 1558-2023 |
Infrared absorption test method for substituted carbon content in silicon 硅中代位碳含量的红外吸收测试方法 |
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| GB/T 43366-2023 |
General specification for semiconductor discrete devices for aerospace applications 宇航用半导体分立器件通用规范 |
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| GB/T 5686.9-2023 |
Ferromanganese, manganese-silicon alloy, ferromanganese nitride and metallic manganese. Determination of manganese, silicon, phosphorus and iron content. Wavelength dispersive X-ray fluorescence spectrometry (cast glass plate method) 锰铁、锰硅合金、氮化锰铁和金属锰 锰、硅、磷和铁含量的测定 波长色散X射线荧光光谱法(熔铸玻璃片法) |
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| GB/T 5686.5-2023 |
Ferromanganese, manganese-silicon alloy, ferromanganese nitride and metallic manganese Determination of carbon content Infrared absorption method, gas volume method, gravimetric method and coulometric method 锰铁、锰硅合金、氮化锰铁和金属锰 碳含量的测定 红外线吸收法、气体容量法、重量法和库仑法 |
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| GB/T 3653.3-2023 |
Ferroboron Determination of silicon content Perchloric acid dehydration gravimetric method 硼铁 硅含量的测定 高氯酸脱水重量法 |
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| GB/T 42513.4-2023 |
Methods for chemical analysis of nickel alloys Part 4: Determination of silicon content Nitrous oxide-flame atomic absorption spectrometry and molybdenum blue spectrophotometry 镍合金化学分析方法 第4部分：硅含量的测定 一氧化二氮-火焰原子吸收光谱法和钼蓝分光光度法 |
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| GB/T 43315-2023 |
Detection of silicon wafer flow pattern defects Corrosion method 硅片流动图形缺陷的检测 腐蚀法 |
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| GB/T 43313-2023 |
Testing of surface quality and microtube density of polished silicon carbide wafers by confocal differential interference method 碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法 |
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| GB/T 21218-2023 |
Unused silicon insulating liquid for electrical use 电气用未使用过的硅绝缘液体 |
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| GB/T 43314-2023 |
Silicone rubber, determination of phenyl and vinyl content, proton nuclear magnetic resonance spectroscopy 硅橡胶 苯基和乙烯基含量的测定 核磁共振氢谱法 |
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| GB 21347-2023 |
Energy consumption limit per unit product for industrial silicon and magnesium 工业硅和镁单位产品能源消耗限额 |
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| GB/T 4937.26-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) susceptibility testing Human Body Model (HBM) 半导体器件 机械和气候试验方法 第26部分：静电放电（ESD）敏感度测试 人体模型（HBM） |
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| GB/T 4587-2023 |
Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors 半导体器件 分立器件 第7部分：双极型晶体管 |
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| GB/T 4333.2-2023 |
Ferrosilicon Determination of phosphorus content Bismuth phosphorus molybdenum blue spectrophotometry 硅铁 磷含量的测定 铋磷钼蓝分光光度法 |
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| GB/T 43226-2023 |
Single-event soft error time domain testing method for semiconductor integrated circuits used in aerospace applications 宇航用半导体集成电路单粒子软错误时域测试方法 |
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| GB/T 43136-2023 |
Superabrasive products Grinding wheels for precision scribing of semiconductor chips 超硬磨料制品 半导体芯片精密划切用砂轮 |
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| GB/T 43061-2023 |
Semiconductor integrated circuit PWM controller test method 半导体集成电路 PWM控制器测试方法 |
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| GB/T 43040-2023 |
Semiconductor integrated circuit AC/DC converter test method 半导体集成电路 AC/DC变换器测试方法 |
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| GB/T 43035-2023 |
Semiconductor Devices Integrated Circuits Part 20: General Specifications for Film Integrated Circuits and Hybrid Film Integrated Circuits Part 1: Internal Visual Inspection Requirements 半导体器件 集成电路 第20部分：膜集成电路和混合膜集成电路总规范 第一篇：内部目检要求 |
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| GB/T 42975-2023 |
Semiconductor integrated circuit driver test methods 半导体集成电路 驱动器测试方法 |
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| GB/T 42974-2023 |
Semiconductor integrated circuit flash memory (FLASH) 半导体集成电路 快闪存储器（FLASH） |
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| GB/T 42973-2023 |
Semiconductor integrated circuit Digital-to-analog (DA) converter 半导体集成电路 数字模拟（DA）转换器 |
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| GB/T 42970-2023 |
Semiconductor integrated circuit video encoding and decoding circuit testing method 半导体集成电路 视频编解码电路测试方法 |
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| GB/T 20870.5-2023 |
Semiconductor devices Part 16-5: Microwave integrated circuits Oscillators 半导体器件 第16-5部分：微波集成电路 振荡器 |
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| GB/T 20870.2-2023 |
Semiconductor devices Part 16-2: Microwave integrated circuits Prescalers 半导体器件 第16-2部分：微波集成电路 预分频器 |
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| GB/T 20870.10-2023 |
Semiconductor Devices Part 16-10: Monolithic Microwave Integrated Circuit Technology Acceptable Procedures 半导体器件 第16-10部分：单片微波集成电路技术可接收程序 |
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| GB/T 15651.6-2023 |
Semiconductor devices Part 5-6: Optoelectronic devices Light emitting diodes 半导体器件 第5-6部分：光电子器件 发光二极管 |
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| GB/T 42709.19-2023 |
Semiconductor devices Microelectronic mechanical devices Part 19: Electronic compass 半导体器件 微电子机械器件 第19部分：电子罗盘 |
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| GB/T 31958-2023 |
Amorphous silicon thin film transistor liquid crystal display substrate glass 非晶硅薄膜晶体管液晶显示器用基板玻璃 |
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| GB/T 42897-2023 |
Microelectromechanical systems (MEMS) technology Silicon-based MEMS nano-thickness film tensile strength test method 微机电系统（MEMS）技术 硅基MEMS纳米厚度膜抗拉强度试验方法 |
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| GB/T 42896-2023 |
Microelectromechanical systems (MEMS) technology Silicon-based MEMS nanoscale structure impact test method 微机电系统（MEMS）技术 硅基MEMS纳尺度结构冲击试验方法 |
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| GB/T 42895-2023 |
Microelectromechanical systems (MEMS) technology Silicon-based MEMS microstructure bending strength test method 微机电系统（MEMS）技术 硅基MEMS微结构弯曲强度试验方法 |
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| GB/T 42794-2023 |
Nickel iron - Determination of carbon, sulfur, silicon, phosphorus, nickel, cobalt, chromium and copper content - Spark source atomic emission spectrometry 镍铁 碳、硫、硅、磷、镍、钴、铬和铜含量的测定 火花源原子发射光谱法 |
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| GB/T 6150.12-2023 |
Methods for chemical analysis of tungsten concentrates Part 12: Determination of silica content Silicon-molybdenum blue spectrophotometry and gravimetric method 钨精矿化学分析方法 第12部分：二氧化硅含量的测定 硅钼蓝分光光度法和重量法 |
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| GB/T 42907-2023 |
Testing of non-equilibrium carrier recombination lifetime in silicon ingots, silicon blocks and silicon wafers Non-contact eddy current induction method 硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法 |
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| GB/T 42905-2023 |
Testing of Silicon Carbide Epitaxial Layer Thickness Infrared Reflection Method 碳化硅外延层厚度的测试 红外反射法 |
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| GB/T 42902-2023 |
Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method 碳化硅外延片表面缺陷的测试 激光散射法 |
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| GB/T 42789-2023 |
Test method for silicon wafer surface gloss 硅片表面光泽度的测试方法 |
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| GB/T 42676-2023 |
Testing the quality of semiconductor single crystals X-ray diffraction method 半导体单晶晶体质量的测试 X射线衍射法 |
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| GB/T 35307-2023 |
Fluidized bed granular silicon 流化床法颗粒硅 |
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| GB/T 35306-2023 |
Determination of carbon and oxygen content in silicon single crystal Low-temperature Fourier transform infrared spectroscopy 硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法 |
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| GB/T 30652-2023 |
Trichlorosilane for silicon epitaxy 硅外延用三氯氢硅 |
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| GB/T 29057-2023 |
Procedure for evaluating polycrystalline silicon rods by zone melting and spectroscopic analysis 用区熔拉晶法和光谱分析法评价多晶硅棒的规程 |
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| GB/T 24582-2023 |
Determination of metal impurity content on polycrystalline silicon surface by acid leaching-inductively coupled plasma mass spectrometry 多晶硅表面金属杂质含量测定 酸浸取-电感耦合等离子体质谱法 |
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| GB/T 6616-2023 |
Testing of semiconductor wafer resistivity and semiconductor film sheet resistance non-contact eddy current method 半导体晶片电阻率及半导体薄膜薄层电阻的测试 非接触涡流法 |
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| GB/T 1555-2023 |
Semiconductor single crystal crystal orientation determination method 半导体单晶晶向测定方法 |
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| GB/T 1553-2023 |
Determination of minority carrier lifetime in silicon and germanium Photoconductivity decay method 硅和锗体内少数载流子寿命的测定 光电导衰减法 |
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| GB/T 42848-2023 |
Semiconductor integrated circuits - Test methods for direct digital frequency synthesizers 半导体集成电路 直接数字频率合成器测试方法 |
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| GB/T 42839-2023 |
Semiconductor integrated circuit Analog-to-digital (AD) converter 半导体集成电路 模拟数字（AD）转换器 |
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| GB/T 42838-2023 |
Semiconductor integrated circuit Hall circuit test method 半导体集成电路 霍尔电路测试方法 |
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| GB/T 42837-2023 |
Microwave semiconductor integrated circuit amplifier 微波半导体集成电路 放大器 |
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| GB/T 42836-2023 |
Microwave semiconductor integrated circuit mixer 微波半导体集成电路 混频器 |
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| GB/T 42835-2023 |
Semiconductor integrated circuit system on chip (SoC) 半导体集成电路 片上系统（SoC） |
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| GB/T 10067.417-2023 |
Basic specifications for electrothermal and electromagnetic treatment devices Part 417: Devices for growing silicon carbide single crystals 电热和电磁处理装置基本技术条件 第417部分：碳化硅单晶生长装置 |
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| GB/T 26416.8-2023 |
Methods for chemical analysis of rare earth iron alloys - Part 8: Determination of silicon content - Photometric method 稀土铁合金化学分析方法 第8部分：硅量的测定 光度法 |
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| GB/T 4937.23-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life 半导体器件 机械和气候试验方法 第23部分：高温工作寿命 |
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| GB/T 4937.27-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) susceptibility test - Machine model (MM) 半导体器件 机械和气候试验方法 第27部分：静电放电（ESD）敏感度测试 机器模型（MM） |
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| GB/T 4937.32-2023 |
Semiconductor devices - Methods of mechanical and climatic tests - Part 32: Flammability of plastic encapsulated devices (externally induced) 半导体器件 机械和气候试验方法 第32部分：塑封器件的易燃性（外部引起的） |
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| GB/T 4937.31-2023 |
Semiconductor devices - Methods of mechanical and climatic tests - Part 31: Flammability of plastic encapsulated devices (internal origin) 半导体器件 机械和气候试验方法 第31部分：塑封器件的易燃性（内部引起的） |
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| GB/T 42706.5-2023 |
Electronic components - Long term storage of semiconductor devices - Part 5: Chips and wafers 电子元器件 半导体器件长期贮存 第5部分：芯片和晶圆 |
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| GB/T 42706.2-2023 |
Electronic components - Long-term storage of semiconductor devices - Part 2: Degradation mechanisms 电子元器件 半导体器件长期贮存 第2部分：退化机理 |
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| GB/T 42706.1-2023 |
Electronic components - Long term storage of semiconductor devices - Part 1: General 电子元器件 半导体器件长期贮存 第1部分：总则 |
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| GB/T 15879.604-2023 |
Mechanical standardization of semiconductor devices - Part 6-4: General rules for drawing outline drawings of surface mount semiconductor device packages - Dimensional measurement methods for ball array (BGA) packages 半导体器件的机械标准化 第6-4部分：表面安装半导体器件封装外形图绘制的一般规则 焊球阵列（BGA）封装的尺寸测量方法 |
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| GB/T 4937.42-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 42: Temperature and humidity storage 半导体器件 机械和气候试验方法 第42部分：温湿度贮存 |
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| GB/T 42709.7-2023 |
Semiconductor devices Microelectromechanical devices Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection 半导体器件 微电子机械器件 第7部分：用于射频控制和选择的MEMS体声波滤波器和双工器 |
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| GB/T 42709.5-2023 |
Semiconductor devices Microelectromechanical devices Part 5: RF MEMS switches 半导体器件 微电子机械器件 第5部分：射频MEMS开关 |
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| GB/T 30656-2023 |
Silicon carbide single crystal polished wafer 碳化硅单晶抛光片 |
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| GB/T 41593-2022 |
extruded silicone tubing 挤出硅树脂管 |
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| GB/T 41652-2022 |
Silicon electrode and silicon ring for etching machine 刻蚀机用硅电极及硅环 |
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| GB/T 41605-2022 |
Silicon nitride materials for rolling bearing balls - Test method for indentation fracture resistance at room temperature - Indentation method 滚动轴承球用氮化硅材料 室温压痕断裂阻力试验方法 压痕法 |
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| GB/T 21944.4-2022 |
Silicon carbide special products - Reaction sintered silicon carbide kiln furniture - Part 4: Burner sleeves 碳化硅特种制品 反应烧结碳化硅窑具 第4部分：烧嘴套 |
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| GB/T 21944.3-2022 |
Silicon carbide special products - Reaction sintered silicon carbide kiln furniture - Part 3: Rollers 碳化硅特种制品 反应烧结碳化硅窑具 第3部分：辊棒 |
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| GB/T 21944.2-2022 |
Silicon carbide special products - Reaction sintered silicon carbide kiln furniture - Part 2: Shaped beams 碳化硅特种制品 反应烧结碳化硅窑具 第2部分：异形梁 |
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| GB/T 41497-2022 |
Vanadium, iron, vanadium, silicon, phosphorus, manganese, aluminum and iron determination of content wavelength dispersive X-ray fluorescence spectrometric method 钒铁 钒、硅、磷、锰、铝、铁含量的测定 波长色散X射线荧光光谱法 |
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| GB/T 41490-2022 |
Test method for rolling contact fatigue of silicon nitride ceramics at room temperature ball plate method 氮化硅陶瓷 室温下滚动接触疲劳试验方法 球板法 |
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| GB/T 32280-2022 |
Test method for warp and bow of silicon wafers—Automated non-contact scanning method 硅片翘曲度和弯曲度的测试 自动非接触扫描法 |
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| GB/T 4333.8-2022 |
Ferrosilicon—Determination of calcium content—Flame atomic absorption spectrometry 硅铁 钙含量的测定 火焰原子吸收光谱法 |
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| GB/T 2480-2022 |
Conventional abrasive—Silicon carbide 普通磨料 碳化硅 |
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| GB/T 24581-2022 |
Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method 硅单晶中III、V族杂质含量的测定 低温傅立叶变换红外光谱法 |
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| GB/T 26069-2022 |
Annealed monocrystalline silicon wafers 硅单晶退火片 |
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| GB/T 3286.11-2022 |
Methods for chemical analysis of limestone and dolomite—Part 11: Determination of calcium oxide, magnesium oxide, silicon dioxide, aluminium oxide and iron oxide content—Wavelength dispersive X-ray fluorescence spectrometry (Fused cast bead method) 石灰石及白云石化学分析方法 第11部分：氧化钙、氧化镁、二氧化硅、氧化铝及氧化铁含量的测定 波长色散X射线荧光光谱法(熔铸玻璃片法) |
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| GB/T 21944.1-2022 |
Special products of silicon carbide—Kiln furniture of reaction bonded silicon carbide—Part 1：Beams 碳化硅特种制品 反应烧结碳化硅窑具 第1部分：方梁 |
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| GB/T 8446.3-2022 |
Heat sinks for power semiconductor devices—Part 3: Insulators and fasteners 电力半导体器件用散热器 第3部分：绝缘件和紧固件 |
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| GB/T 8446.2-2022 |
Heat sinks for power semiconductor devices—Part 2: Measurement methods of thermal resistance and inlet-outlet fluid pressure drop 电力半导体器件用散热器 第2部分：热阻和流阻测量方法 |
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| GB/T 8446.1-2022 |
Heat sinks for power semiconductor devices—Part 1: Radiators 电力半导体器件用散热器 第1部分：散热体 |
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| GB/T 41325-2022 |
Low-density crystal primary pit silicon single crystal polishing wafer for integrated circuits 集成电路用低密度晶体原生凹坑硅单晶抛光片 |
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| GB/T 41322-2022 |
Cemented carbides - Determination of silicon content in cobalt powder - Spectrophotometric method 硬质合金 钴粉中硅量的测定 分光光度法 |
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| GB/T 8750-2022 |
Gold-based bonding wire and ribbon for semiconductor packaging 半导体封装用金基键合丝、带 |
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| GB/T 34590.11-2022 |
Road vehicles - Functional safety - Part 11: Guidelines for semiconductor applications 道路车辆 功能安全 第11部分：半导体应用指南 |
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| GB/T 5686.7-2022 |
Ferromanganese, manganese silicon alloy, ferromanganese nitride and metal manganese Determination of sulfur content Infrared absorption method and combustion neutralization titration method 锰铁、锰硅合金、氮化锰铁和金属锰 硫含量的测定 红外线吸收法和燃烧中和滴定法 |
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| GB/T 12963-2022 |
Electronic Grade Polysilicon 电子级多晶硅 |
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| GB/T 42263-2022 |
Determination of nitrogen content in silicon single crystals - Secondary ion mass spectrometry 硅单晶中氮含量的测定 二次离子质谱法 |
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| GB/T 42276-2022 |
Determination of Fluoride and Chloride Contents in Silicon Nitride Powder - Ion Chromatography 氮化硅粉体中氟离子和氯离子含量的测定 离子色谱法 |
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| GB/T 42271-2022 |
Non-contact measurement method for resistivity of semi-insulating silicon carbide single crystal 半绝缘碳化硅单晶的电阻率非接触测试方法 |
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