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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "memory" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • GB/T 33657-2017
  • Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells memory
    China National Standards
  • SJ/T 11585-2016
  • (Serial memory interface requirements) memory
    China Electronics Standards
  • SJ/T 11528-2015
  • Information technology. Mobile storage.General specification of memory cards memory
    China Electronics Standards
  • GB/T 12604.10-2011
  • Non-destructive testing - Terminology - Terms used in magnetic memory testing memory
    China National GB Standards
  • GB/T 26641-2011
  • Non-destructive testing - Magnetic memory testing - General principles memory
    China National Standards
  • DL/T 1105.4-2010
  • The technical guideline of non-destructive inspection for fillet welds of small diameter nozzle stubs on boiler headers in power stations. Part 4: Magnetic memory metal diagnostic technique memory
    China Electricity & Power Standards
  • DL/T 370-2010
  • Metal magnetic memory testing of welded joint on pressure equipments memory
    China Electricity & Power Standards
  • GB/T 23614.2-2009
  • Chemical analysis methods for titanium nickel shape memory alloy - Part 2: Determination of cobalt, copper, chromium, iron, niobium content - Inductively coupled plasma atomic emission spectrometry memory
    China National Standards
  • GB/T 23614.1-2009
  • Methods for chemical analysis of titanium nickel shape memory alloy - Part 1: Determination of nickel content - Dimethylglyoxime precipitate separatioin-EDTA complex-zinc chloride back titration memory
    China National Standards
  • GB 24627-2009
  • Standard specification for wrought nickel-titanium shape memory alloys for medical devices and surgical implants memory
    China National GB Standards
  • DL/T 1105.4-2009
  • The small caliber take over the seat of power station boiler set box fillet weld destructive testing technology Guide Part 4: Magnetic memory Testing memory
    China Electricity & Power Standards
  • GB/T 17574.11-2006
  • Semiconductor devices - Integrated circuits - Part 2-11: Digital integrated circuits - Blank detail specification for single supply integrated circuit electrically erasable and programmable read-only memory memory
    China National GB Standards
  • GB/T 17550.4-2000
  • Identification cards--Optical memory cards--Linear recording method--Part 4:Logical data structures memory
    China National GB Standards
  • GB/T 17825.10-1999
  • Management of CAD documents--memory and maintenance memory
    China National GB Standards
  • GB/T 17551-1998
  • Identification cards--Optical memory cards--General characteristics memory
    China National GB Standards
  • GB/T 17550.1-1998
  • Identification cards--Optical memory cards--Linear recording method--Part 1:Physical characteristics memory
    China National GB Standards
  • GB/T 17550.3-1998
  • Identification cards--Optical memory cards--Linear recording method--Part 3:Optical properties and characteristics memory
    China National GB Standards
  • GB/T 17550.2-1998
  • Identification cards--Optical memory cards--Linear recording method--Part 2:Dimensions and location of the accessible optical area memory
    China National GB Standards
  • SJ/T 10801-1996
  • Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for magnetic memory drivers memory
    China Electronics Standards
  • SJ 50597/38-1995
  • Semiconductor integrated circuits. Detail specification for Type JM2148H NMOS 1024*4 bit static random access memory memory
    China Electronics Standards
  • SJ 50597.10-1994
  • pecification for type Jμ82258-6, Jμ 82258-8 direct memory access (DMA) controllers of semiconductor integrated circuits memory
    China Electronics Standards

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