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  •  China "planar" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • GB/T 34938-2017
  • General technical requirements for planar electromagnetic shielding materials China National Standards
  • SJ/T 11642-2016
  • (Direct broadcast satellite television broadcasting receiving planar antenna General specification) China Electronics Standards
  • YD/T 2000.1-2014
  • (planar waveguide integrated optical circuit devices - Part 1: Based on planar waveguide (PLC) optical power splitter) China Telecommunication Standards
  • GB/T 30142-2013
  • Measuring methods for shielding effectiveness of planar electromagnetic shielding materials China National Standards
  • GB/T 29505-2013
  • Test method for measuring surface roughness on planar surfaces of silicon wafer China National Standards
  • GB/T 28511.2-2012
  • Integrated optical path devices based on planar lightwave circuit - Part 2 :DWDM filter based on AWG technology China National Standards
  • GB/T 28511.1-2012
  • Integrated optical path devices based on planar lightwave circuit - Part 1:Optical power splitter based on PLC technology China National Standards
  • YD/T 2000.2-2009
  • Integrated optical path devices based on planar lightwave circuit. Part 2: DWDM filter based on AWG technology China Telecommunication Standards
  • YD/T 2000.1-2009
  • Integrated optical path devices based on planar lightwave circuit. Part 1: Optical power splitter based on PLC technology China Telecommunication Standards
  • GB/T 13694-2008
  • General Specifications for α,βand γ planar standard sources China National GB Standards
  • GB/T 16444-2008
  • planar double-enveloping worm gearing reducer China National GB Standards
  • GB/T 9008-2007
  • Terms of liquid chromatography - Column chromatography and planar chromatography China National Standards
  • JT/T 689-2007
  • Test method for coefficient of retroreflection of utilizing the coplanar geometry China Highway & Transportation Standards
  • GB/T 16445-1996
  • planar double-enveloping worm gearing accuracy China National GB Standards
  • GB/T 16443-1996
  • planar double-enveloping worm gearing geometrical data symbols China National GB Standards
  • GB/T 16442-1996
  • planar double-enveloping worm gearing terminology China National GB Standards
  • SJ 20400-1994
  • Methods of near. field measurement for planar waveguide -- fed slot arrays with low sidelobes China Electronics Standards
  • SJ 20412-1994
  • Requirements of packaging, transportation and storage for planar waveguide-fed slot arrays with low sidelobes of airborne radars China Electronics Standards
  • SJ 20399-1994
  • General specification for protective cover for planar waveguide -- fed slot array surface China Electronics Standards
  • SJ 20401-1994
  • Methods of measurement for isolated slot of planar waveguide -- fed slot arrays China Electronics Standards
  • SJ 20348-1993
  • Methods of far-field measurement for planar waveguide-fed slot arrays with low sidelobes China Electronics Standards
  • JJG(EJ)16-1991
  • (With grid ionization chamber standard device for measuring α planar surface emissivity source test methods) China Metrological Standards
  • SJ 2280-1983
  • (3DG131 type NPN silicon epitaxial planar transistor low power UHF) China Electronics Standards
  • SJ 2381-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD557, 3CD558 and 3CD657 China Electronics Standards
  • SJ 2289-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151 China Electronics Standards
  • SJ 2283-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG144 China Electronics Standards
  • SJ 2288-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG149 China Electronics Standards
  • SJ 2279-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG123 China Electronics Standards
  • SJ 2291-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG153 China Electronics Standards
  • SJ 2274-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG113 China Electronics Standards
  • SJ 2290-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151 China Electronics Standards
  • SJ 2294-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG156 China Electronics Standards
  • SJ 2281-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG132 China Electronics Standards
  • SJ 2285-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG146 China Electronics Standards
  • SJ 2284-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG145 China Electronics Standards
  • SJ 2273-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG81 China Electronics Standards
  • SJ 2293-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG155 China Electronics Standards
  • SJ 2286-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG147 China Electronics Standards
  • SJ 2276-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114 China Electronics Standards
  • SJ 2287-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Tuype 3DG148 China Electronics Standards
  • SJ 2278-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72 China Electronics Standards
  • SJ 2292-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG154 China Electronics Standards
  • SJ 2379-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD553, 3CD554 and 3CD653 China Electronics Standards
  • SJ 2376-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647 China Electronics Standards
  • SJ 2378-1983
  • Detail specification for silicon PNPepitaxial planar low frequency high power transistors, Type 3CD551, 3CD552 and 3CD651 China Electronics Standards
  • SJ 2282-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG143 China Electronics Standards
  • SJ 2277-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG115 China Electronics Standards
  • SJ 2271-1983
  • Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes China Electronics Standards
  • SJ 2382-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD559 and 3CD560 China Electronics Standards
  • SJ 2380-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD555, 3CD556 and 3CD655 China Electronics Standards
  • SJ 2275-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG85 China Electronics Standards
  • SJ 2272-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG44 China Electronics Standards
  • SJ 2377-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD548 3CD550 and 3CD649 China Electronics Standards
  • SJ 1841-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK100 China Electronics Standards
  • SJ 1829-1981
  • Detail specification silicon NPN epitaxial planar low power switching transistors, Type 3DK5 China Electronics Standards
  • SJ 1833-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK103 China Electronics Standards
  • SJ 1836-1981
  • (3DK106 type NPN silicon epitaxial planar low power switching transistor) China Electronics Standards
  • SJ 1835-1981
  • (3DK105 type NPN silicon epitaxial planar low power switching transistor) China Electronics Standards
  • SJ 1832-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK102 China Electronics Standards
  • SJ 1828-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK53 China Electronics Standards
  • SJ 1845-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK113 China Electronics Standards
  • SJ 1844-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK112 China Electronics Standards
  • SJ 1830-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK101 China Electronics Standards
  • SJ 1831-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK28 China Electronics Standards
  • SJ 1837-1981
  • (3DK107 type NPN silicon epitaxial planar low power switching transistor) China Electronics Standards
  • SJ 1839-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK108 China Electronics Standards
  • SJ 1838-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29 China Electronics Standards
  • SJ 1842-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK110 China Electronics Standards
  • SJ 1840-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK14 China Electronics Standards
  • SJ 1843-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK111 China Electronics Standards
  • SJ 1834-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK104 China Electronics Standards
  • SJ 1827-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK6 China Electronics Standards
  • SJ 1846-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK120 China Electronics Standards
  • SJ 1826-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK100 China Electronics Standards
  • SJ 1847-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK121 China Electronics Standards
  • SJ 1848-1981
  • Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK130 China Electronics Standards
  • SJ 1825-1981
  • Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK21 China Electronics Standards
  • SJ 1478-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG121 China Electronics Standards
  • SJ 1473-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG111 China Electronics Standards
  • SJ 1481-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG131 China Electronics Standards
  • SJ 1485-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors, Type 3CG170 China Electronics Standards
  • SJ 1480-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG130 China Electronics Standards
  • SJ 1475-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG113 China Electronics Standards
  • SJ 1476-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG114 China Electronics Standards
  • SJ 1470-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG102 China Electronics Standards
  • SJ 1486-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors, Type 3CG180 China Electronics Standards
  • SJ 1468-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG100 China Electronics Standards
  • SJ 1479-1979
  • Detail specifiation for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG122 China Electronics Standards
  • SJ 1471-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG103 China Electronics Standards
  • SJ 1484-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors, Type 3CG160 China Electronics Standards
  • SJ 1474-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG112 China Electronics Standards
  • SJ 1477-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG120 China Electronics Standards
  • SJ 1483-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power noise transistors, Type 3CG140 China Electronics Standards
  • SJ 1482-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG132 China Electronics Standards
  • SJ 1469-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG101 China Electronics Standards
  • SJ 1472-1979
  • Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG110 China Electronics Standards
  • SJ 800-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG180 China Electronics Standards
  • SJ 782-1974
  • Detail specfication for silicon NPN planar high frequency low power transistors, Type 3DG100 China Electronics Standards
  • SJ 767-1974
  • Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD53 and 3DD54 China Electronics Standards
  • SJ 783-1974
  • Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG101 China Electronics Standards

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