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  •  China "semiconducto" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • GB/T 35010.1-2018
  • semiconductor die products—Part 1:Requirements for procurement and use semiconducto
    China National Standards
  • GB/T 36005-2018
  • Measuring methods of optical radiation safety for semiconductor lighting equipments and systems semiconducto
    China National Standards
  • GB/T 35010.5-2018
  • semiconductor die products—Part 5:Requirements for concerning electrical simulation semiconducto
    China National Standards
  • GB/T 35006-2018
  • semiconductor integrated circuits—Measuring method of level converter semiconducto
    China National Standards
  • GB/T 4377-2018
  • semiconductor integrated circuits—Measuring method of voltage regulators semiconducto
    China National Standards
  • GB/T 14028-2018
  • semiconductor integrated circuits—Measuring method of analogue switch semiconducto
    China National Standards
  • GB/T 35007-2018
  • semiconductor integrated circuits—Measuring method of low voltage differential signaling circuitry semiconducto
    China National Standards
  • GB/T 35010.6-2018
  • semiconductor die products—Part 6: Requirements for concerning thermal simulation semiconducto
    China National Standards
  • GB/T 35010.2-2018
  • semiconductor die products—Part 2: Exchange data formats semiconducto
    China National Standards
  • GB/T 35010.3-2018
  • semiconductor die products—Part 3: Guide for handling, packing and storage semiconducto
    China National Standards
  • GB/T 35010.8-2018
  • semiconductor die products—Part8: EXPRESS model schema for data exchange semiconducto
    China National Standards
  • GB/T 35010.4-2018
  • semiconductor die products—Part 4: Requirements for die users and suppliers semiconducto
    China National Standards
  • GB/T 35010.7-2018
  • semiconductor die products—Part 7: XML schema for data exchange semiconducto
    China National Standards
  • GB/T 34971-2017
  • Guide for gaseous effluent handling in semiconductor industry semiconducto
    China National Standards
  • GB/T 5226.33-2017
  • Electrical safety of machinary—Electrical equipment of machines—Part 33: Requirements for semiconductor fabrication equipment semiconducto
    China National Standards
  • GB/T 34507-2017
  • Palladium coated copper bonding wire for semiconductor package semiconducto
    China National Standards
  • GB/T 34502-2017
  • Gold-coated silver and silver alloy bonding wires for semiconductor package semiconducto
    China National Standards
  • GB/T 15651.4-2017
  • semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers semiconducto
    China National Standards
  • GB/T 249-2017
  • The rule of type designation for discrete semiconductor devices semiconducto
    China National Standards
  • GB/T 14048.12-2016
  • Low-voltage switchgear and controlgear—Part 4-3: Contactors and motor-starters—AC semiconductor controllers and contactors for non-motor loads semiconducto
    China National Standards
  • GB/T 14048.6-2016
  • Low-voltage switchgear and controlgear—Part 4-2: Contactors and motor-starters—AC semiconductor motor controllers and starters (including soft-starters) semiconducto
    China National Standards
  • GB/T 32817-2016
  • semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS semiconducto
    China National Standards
  • SJ/T 11577-2016
  • (SJ/T 11394-2009 "semiconductor light-emitting diode test method" Application Guide) semiconducto
    China Electronics Standards
  • SJ/T 2749-2016
  • (The semiconductor laser diode test) semiconducto
    China Electronics Standards
  • SJ/T 2658.15-2016
  • (The semiconductor infrared emitting diodes measuring methods - Part 15: Thermal resistance) semiconducto
    China Electronics Standards
  • SJ/T 11586-2016
  • (The semiconductor device 10keV low-energy X-ray test method for total dose radiation) semiconducto
    China Electronics Standards
  • SJ/T 2658.16-2016
  • (The semiconductor infrared emitting diodes measuring methods - Part 16: photoelectric conversion efficiency) semiconducto
    China Electronics Standards
  • SJ/T 2658.14-2016
  • (The semiconductor infrared emitting diodes measuring methods - Part 14: Junction Temperature) semiconducto
    China Electronics Standards
  • GB/T 13539.4-2016
  • Low-voltage fuses—Part 4: Supplementary requirements for fuse-links for the protection of semiconductor devices semiconducto
    China National Standards
  • SJ/T 1486-2016
  • (Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) semiconducto
    China Electronics Standards
  • SJ/T 1477-2016
  • (Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1472-2016
  • (Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1480-2016
  • (Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1831-2016
  • (semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1826-2016
  • (semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1838-2016
  • (semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1839-2016
  • (semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1833-2016
  • (semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1834-2016
  • (semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1830-2016
  • (semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • SJ/T 1832-2016
  • (semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) semiconducto
    China Electronics Standards
  • YY 1289-2016
  • (Laser therapy equipment ophthalmic semiconductor laser photocoagulation instrument) semiconducto
    China Medicine & Medical Device Standards
  • GB/T 15291-2015
  • semiconductor devices—Part 6: Thyristors semiconducto
    China National Standards
  • GB/T 4023-2015
  • semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes semiconducto
    China National Standards
  • SJ/T 2658.10-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 10: Modulation bandwidth semiconducto
    China Electronics Standards
  • SJ/T 2658.3-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 3: Reverse voltage and reverse current semiconducto
    China Electronics Standards
  • SJ/T 2658.1-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 1: General semiconducto
    China Electronics Standards
  • SJ/T 2658.4-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 4: Total capacitance semiconducto
    China Electronics Standards
  • SJ/T 2658.12-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 12: Peak-emission wavelength and spectral radiant bandwidth semiconducto
    China Electronics Standards
  • SJ/T 2658.11-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 11: Response time semiconducto
    China Electronics Standards
  • SJ/T 2658.7-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 7: Radiant flux semiconducto
    China Electronics Standards
  • SJ/T 2658.5-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 5: Series connection resistance semiconducto
    China Electronics Standards
  • SJ/T 2658.8-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 8: Radiant intensity semiconducto
    China Electronics Standards
  • SJ/T 2658.2-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 2: Forward voltage semiconducto
    China Electronics Standards
  • SJ/T 2658.13-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 13: Temperature coefficient for radiant power semiconducto
    China Electronics Standards
  • SJ/T 2658.6-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 6: Radiant power semiconducto
    China Electronics Standards
  • SJ/T 10414-2015
  • (The semiconductor device with solder) semiconducto
    China Electronics Standards
  • SJ/T 2658.9-2015
  • Measuring method for semiconductor infrared-emitting diode - Part 9: Spatial distribution of radiant intensity and half-intensity angle semiconducto
    China Electronics Standards
  • GB/T 15878-2015
  • semiconductor integrated circuits—Specification of leadframes for small outline package semiconducto
    China National Standards
  • GB/T 15876-2015
  • semiconductor integrated circuits—Specification of leadframes for plastic quad flat package semiconducto
    China National Standards
  • GB/T 31469-2015
  • semiconductor materials cutting fluid semiconducto
    China National Standards
  • GB/T 14112-2015
  • semiconductor integrated circuits—Specification for stamped leadframes of plastic DIP semiconducto
    China National Standards
  • GB/T 16525-2015
  • semiconductor integrated circuits—Specification of leadframes for plastic leaded chip carrier package semiconducto
    China National Standards
  • SJ/T 11487-2015
  • Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer semiconducto
    China Electronics Standards
  • SJ/T 2215-2015
  • Measuring methods for semiconductor photocouplers semiconducto
    China Electronics Standards
  • SJ/T 2214-2015
  • Measuring methods for semiconductor photodiode and phototransistor semiconducto
    China Electronics Standards
  • YY/T 0998-2015
  • semiconductor heating and/or cooling therapy equipment semiconducto
    China Medicine & Medical Device Standards
  • GB/T 31359-2015
  • Test methods of semiconductor lasers semiconducto
    China National Standards
  • GB/T 31358-2015
  • General specification for semiconductor lasers semiconducto
    China National Standards
  • GB/T 8750-2014
  • Gold bonding wire for semiconductor package semiconducto
    China National Standards
  • GB/T 15877-2013
  • semiconductor integrated circuits—Specification of DIP leadframes produced by etching semiconducto
    China National Standards
  • GB/T 30116-2013
  • Requirements for semiconductor manufacturing facility electromagnetic compatibility semiconducto
    China National Standards
  • GB/T 15872-2013
  • Power supply interface for semiconductor equipment semiconducto
    China National Standards
  • GB/T 29845-2013
  • Guide for final assembly, packaging,transportation, unpacking, and relocation of semiconductor manufacturing equipment semiconducto
    China National Standards
  • GB/T 3859.2-2013
  • semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guide semiconducto
    China National Standards
  • GB/T 3859.1-2013
  • semiconductor converters - General requirements and line commutated Converters - Part 1-1: Specification of basic requirements semiconducto
    China National Standards
  • GB/T 3859.3-2013
  • semiconductor converters - General requirements and line commutated converters - Part 1-3: Transformers and reactors semiconducto
    China National Standards
  • GB/T 13422-2013
  • semiconductor converters - Electrical test methods semiconducto
    China National Standards
  • GB/T 13973-2012
  • General specification test methods for semiconductor device curve tracers semiconducto
    China National Standards
  • GB/T 29299-2012
  • General specification of semiconductor laser rangefinder semiconducto
    China National Standards
  • GB/T 29332-2012
  • semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) semiconducto
    China National Standards
  • JC/T 2133-2012
  • Determination of impurities in silica sol for polishing solution in semiconductor industry. Inductively coupled plasma atomic emission spectrometric method semiconducto
    China Building Materials Standards
  • GB/T 4937.4-2012
  • semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) semiconducto
    China National Standards
  • GB/T 4937.3-2012
  • semiconductor devices - Mechanical and climatic tests methods - Part 3: External visual examination semiconducto
    China National Standards
  • GB/T 12667-2012
  • General specification for excitation assembly with semiconductors for synchronous motors semiconducto
    China National Standards
  • GB/T 5201-2012
  • Test procedures for semiconductor charged particle detectors semiconducto
    China National Standards
  • GB/T 12669-2012
  • General specification for cascade speed control assembly with semiconductor converter semiconducto
    China National Standards
  • JC/T 181-2011
  • Transparent quartz glass devices for semiconductor semiconducto
    China Building Materials Standards
  • YD/T 2001.2-2011
  • semiconductor optoelectronic devices for fibre optic system applications. Part 2: measuring methods semiconducto
    China Telecommunication Standards
  • JC/T 597-2011
  • Transparent quartz glass tubes for semiconductor semiconducto
    China Building Materials Standards
  • JC/T 2064-2011
  • Transparent quartz rods for semiconductor semiconducto
    China Building Materials Standards
  • GB/T 26070-2010
  • Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method semiconducto
    China National Standards
  • JJF 1236-2010
  • Calibration Specification for semiconductor Device Curve Tracers semiconducto
    China Metrological Standards
  • YD/T 2001.1-2009
  • semiconductor optoelectronic devices for fibre optic system applications. Part 1: Specification template for essential rating and characteristics semiconducto
    China Telecommunication Standards
  • SJ/T 11394-2009
  • Measure methods of semiconductor light emitting diodes semiconducto
    China Electronics Standards
  • SJ/T 11402-2009
  • Technical specification of semiconductor laser chip used in optical fiber communication semiconducto
    China Electronics Standards
  • SJ/T 11393-2009
  • semiconductor optoelectronic devices. Blank detail specification for power light-emitting diodes semiconducto
    China Electronics Standards
  • SJ/T 11395-2009
  • semiconductor lighting terminology semiconducto
    China Electronics Standards
  • SJ/T 11401-2009
  • Series program for semiconductor light emitting diodes semiconducto
    China Electronics Standards
  • SJ/T 11400-2009
  • semiconductor optoelectronic devices. Blank detail specification for lower-power light-emitting diodes semiconducto
    China Electronics Standards

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