| Standard
Code |
Standard English Title |
Standard Class |
Order |
|
SJ 20089-1992 |
Detail specification capacitors, fixed, ceramic dielectric, type CT106 |
China Electronics - SJ Standards |
 |
|
SJ 20088-1992 |
Detail specification capacitors, fixed, ceramic dielectric, type CT105 |
China Electronics - SJ Standards |
|
|
SJ 20087-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8112 |
China Electronics - SJ Standards |
|
|
SJ 20086-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8110 |
China Electronics - SJ Standards |
|
|
SJ 20085-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8108 |
China Electronics - SJ Standards |
|
|
SJ 20084-1992 |
Capacitors, fixed, metallized polyethylene-terephthalate filmed dielectric d.c. in nonmetal cases, established reliability, CLK233 type, detail specification for |
China Electronics - SJ Standards |
|
|
SJ 20083-1992 |
Capacitors, fixed, polypropylene filmed dielectric metal foil d.c. in nonmetal cases, established reliability, CBBK111 type detail specification for |
China Electronics - SJ Standards |
|
|
SJ 20082-1992 |
Capacitors, fixed, metallized polypropylene filmed dielectric d.c. in nonmetal cases, established reliability, CBBK24 type detail specification for |
China Electronics - SJ Standards |
|
|
SJ 20081-1992 |
Capacitors, fixed, double metallized polypropylene filmed dielectric d.c. in nonmetal cases, established reliability, CBBK23 type detail specification for |
China Electronics - SJ Standards |
|
|
SJ 20079-1992 |
Test methods for gas sensors of metal-oxide semiconductor |
China Electronics - SJ Standards |
|
|
SJ 20078-1992 |
Generic specification of liquid crystal display devices |
China Electronics - SJ Standards |
|
|
SJ 20077-1992 |
Guide of thermal design for microcircuit application |
China Electronics - SJ Standards |
|
|
SJ 20076-1992 |
Detailed specifications for J¦Ì82288 bus controller of semiconductor integrated circuit |
China Electronics - SJ Standards |
|
|
SJ 20075-1992 |
Detailed specifications for J¦Ì8309 programmable interrupt controller of semiconductor integrated circuit |
China Electronics - SJ Standards |
|
|
SJ 20074-1992 |
Detailed specifications for J¦Ì8305 programmable peripheral equipment interface of semiconductor integrated circuit |
China Electronics - SJ Standards |
|
|
SJ 20073-1992 |
Detailed specifications for J¦Ì8304 programmable timer/counter of semiconductor integrated circuit |
China Electronics - SJ Standards |
|
|
SJ 20072-1992 |
Detail specification for semiconductor opto-couplers for type GH24, GH25 and GH26 |
China Electronics - SJ Standards |
|
|
SJ 20071-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 |
China Electronics - SJ Standards |
|
|
SJ 20070-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 |
China Electronics - SJ Standards |
|
|
SJ 20069-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 |
China Electronics - SJ Standards |
|
|
SJ 20068-1992 |
Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 |
China Electronics - SJ Standards |
|
|
SJ 20067-1992 |
Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode |
China Electronics - SJ Standards |
|
|
SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack |
China Electronics - SJ Standards |
|
|
SJ 20065-1992 |
Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier |
China Electronics - SJ Standards |
|
|
SJ 20064-1992 |
Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier |
China Electronics - SJ Standards |
|
|
SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 |
China Electronics - SJ Standards |
|
|
SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 |
China Electronics - SJ Standards |
|
|
SJ 20061-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 |
China Electronics - SJ Standards |
|
|
SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 |
China Electronics - SJ Standards |
|
|
SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 |
China Electronics - SJ Standards |
|
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