China National Standards

China memory GB Standards List


  •  China "memory" GB Standards List:
  • Standard  Code Standard Title Standard Class Order
    GB/T 24627-2023 Nickel-titanium shape memory alloy processing materials for surgical implants {译}
    外科植入物用镍-钛形状记忆合金加工材
    China National Standards
    memory

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    GB/T 42974-2023 Semiconductor integrated circuit flash memory (FLASH) {译}
    半导体集成电路 快闪存储器(FLASH)
    China National Standards
    memory

    English PDF
    GB/T 12604.10-2023 Non-destructive testing - Terminology - Part 10: Magnetic memory testing {译}
    无损检测 术语 第10部分:磁记忆检测
    China National Standards
    memory

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    GB/T 42516-2023 Chemical analysis method of high temperature shape memory alloy - determination of platinum content - thiourea complex precipitation method {译}
    高温形状记忆合金化学分析方法 铂含量的测定 硫脲络合沉淀法
    China National Standards
    memory

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    GB/T 41420-2022 Testing and evaluation of shape memory properties of textiles {译}
    纺织品 形状记忆性能检测和评价
    China National Standards
    memory

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    GB/T 39989-2021 Superelastic titanium-nickel shape memory alloy bar and wire
    超弹性钛镍形状记忆合金棒材和丝材
    China National Standards
    memory

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    GB/T 39985-2021 Titanium-nickel shape memory alloy plate
    钛镍形状记忆合金板材
    China National Standards
    memory

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    GB/T 26641-2021 Non-destructive testing—Magnetic memory testing—General requirements
    无损检测 磁记忆检测 总体要求
    China National Standards
    memory

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    GB/T 35660.3-2021 Information and documentation—RFID in libraries—Part 3:Encoding of data elements based on rules from ISO/IEC 15962 in an RFID tag with partitioned memory
    信息与文献 图书馆射频识别(RFID) 第3部分:分区存储RFID标签中基于ISO/IEC 15962规则的数据元素编码
    China National Standards
    memory

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    GB/T 34370.10-2020 Nondestructive testing of amusement equipments—Part 10: Magnetic memory testing
    游乐设施无损检测 第10部分:磁记忆检测
    China National Standards
    memory

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    GB/T 36474-2018 Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM)
    半导体集成电路 第三代双倍数据速率同步动态随机存储器 (DDR3 SDRAM)测试方法
    China National Standards
    memory

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    GB/T 36477-2018 Semiconductor integrated circuit—Measuring methods for flash memory
    半导体集成电路 快闪存储器测试方法
    China National Standards
    memory

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    GB/T 36614-2018 Integrated circuits—memory devices pin configuration
    集成电路 存储器引出端排列
    China National Standards
    memory

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    GB/T 35003-2018 Test methods for endurance and data retention of non-volatile memory
    非易失性存储器耐久和数据保持试验方法
    China National Standards
    memory

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    GB/T 33657-2017 Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells
    纳米技术 晶圆级纳米尺度相变存储单元电学操作参数测试规范
    China National Standards
    memory

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    GB/T 26641-2011 Non-destructive testing - Magnetic memory testing - General principles
    无损检测 磁记忆检测 总则
    China National Standards
    memory

    English PDF
    GB/T 12604.10-2011 Non-destructive testing - Terminology - Terms used in magnetic memory testing
    无损检测 术语 磁记忆检测
    China National Standards
    memory

    English PDF
    GB 24627-2009 Standard specification for wrought nickel-titanium shape memory alloys for medical devices and surgical implants
    医疗器械和外科植入物用镍-钛形状记忆合金加工材
    China National Standards
    memory

    English PDF
    GB/T 23614.2-2009 Chemical analysis methods for titanium nickel shape memory alloy - Part 2: Determination of cobalt, copper, chromium, iron, niobium content - Inductively coupled plasma atomic emission spectrometry
    钛镍形状记忆合金化学分析方法 第2部分:钴、铜、铬、铁、铌量的测定 电感耦合等离子体发射光谱法
    China National Standards
    memory

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    GB/T 23614.1-2009 Methods for chemical analysis of titanium nickel shape memory alloy - Part 1: Determination of nickel content - Dimethylglyoxime precipitate separatioin-EDTA complex-zinc chloride back titration
    钛镍形状记忆合金化学分析方法 第1部分:镍量的测定 丁二酮肟沉淀分离-EDTA络合-氯化锌返滴定法
    China National Standards
    memory

    English PDF
    GB/T 17574.11-2006 Semiconductor devices - Integrated circuits - Part 2-11: Digital integrated circuits - Blank detail specification for single supply integrated circuit electrically erasable and programmable read-only memory
    半导体器件 集成电路 第2-11部分:数字集成电路 单电源集成电路电可擦可编程只读存储器 空白详细规范
    China National Standards
    memory

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    GB/T 17550.4-2000 Identification cards--Optical memory cards--Linear recording method--Part 4:Logical data structures
    识别卡 光记忆卡 线性记录方法 第4部分:逻辑数据结构
    China National Standards
    memory

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    GB/T 17825.10-1999 Management of CAD documents--memory and maintenance
    CAD文件管理 存储与维护
    China National Standards
    memory

    English PDF
    GB/T 17551-1998 Identification cards--Optical memory cards--General characteristics
    识别卡 光记忆卡 一般特性
    China National Standards
    memory

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    GB/T 17550.3-1998 Identification cards--Optical memory cards--Linear recording method--Part 3:Optical properties and characteristics
    识别卡 光记忆卡 线性记录方法 第3部分:光属性和特性
    China National Standards
    memory

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    GB/T 17550.2-1998 Identification cards--Optical memory cards--Linear recording method--Part 2:Dimensions and location of the accessible optical area
    识别卡 光记忆卡 线性记录方法 第2部分:可访问光区域的尺寸和位置
    China National Standards
    memory

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    GB/T 17550.1-1998 Identification cards--Optical memory cards--Linear recording method--Part 1:Physical characteristics
    识别卡 光记忆卡 线性记录方法 第1部分:物理特性
    China National Standards
    memory

    English PDF

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