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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: photoluminescence detection method of defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 |
China National Standards photoluminescence |
 English PDF |
| GB/T 29856-2013 |
Characterization of semiconducting single-walled carbon nanotubes using near infrared photoluminescence spectroscopy 半导体性单壁碳纳米管的近红外光致发光光谱表征方法 |
China National Standards photoluminescence |
English PDF |
| GB/T 24574-2009 |
Test methods for photoluminescence analysis of single crystal silicon for III-V impurities 硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法 |
China National Standards photoluminescence |
English PDF |
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