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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ/T 10348-2020 |
Detail specification for electronic components Surge suppression type varistor Zinc oxide varistor for overvoltage protection type MYG2 Assessment level E {译} 电子元器件详细规范 浪涌抑制型压敏电阻器 MYG2型过压保护用氧化锌压敏电阻器 评定水平E |
China Electronics Industry
Standards G2 |
 English PDF |
| HJ 812-2016 |
(Determination of Water Soluble Cations (Li +, Na +, NH4 +, K +, Ca2 +, MG2 +) Ion Chromatography) 水质 可溶性阳离子（li+、na+、nh4+、k+、ca2+、mg2+）的测定 离子色谱法 |
China Environmental Protection Industry
Standards G2 |
English PDF |
| HJ 800-2016 |
Ambient air-Determination of the water soluble cations (Li+, Na+, NH4+, K+, Ca2+, MG2+) from atmospheric particles-Ion chromatography 环境空气 颗粒物中水溶性阳离子(li+、na+、nh4+、k+、ca2+、mg2+)的测定 离子色谱法 |
China Environmental Protection Industry
Standards G2 |
English PDF |
| SN/T 3868-2014 |
(Vegetable export of aflatoxin B1; B2; G1; G2- detection - immunoaffinity column HPLC purification) 出口植物油中黄曲霉毒素B1、B2、G1、G2的检测-免疫亲和柱净化高效液相色谱法 |
China Import Export Inspection
Standards G2 |
English PDF |
| SN/T 1664-2005 |
Determination of aflatoxin M1, B1, B2, G1, G2 content in milk and milk powder 牛奶和奶粉中黄曲霉毒素m1、b1、b2、g1、g2含量的测定 |
China Import Export Inspection
Standards G2 |
English PDF |
| SJ 50033/155-2002 |
Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 51931/3-1996 |
Detail specification for type R600XG22×13, R600XG26×16 and R600XG30×19 pot cores ｒ６００ｘｇ２２×１３、ｒ６００ｘｇ２６×１６和ｒ６００ｘｇ３０×１９型罐形磁芯详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 51931/2-1996 |
Detail specification for type R2KXG22×13, R2KXG26×16 and R2KXG30×19 pot cores ｒ２ｋｘｇ２２×１３、ｒ２ｋｘｇ２６×１６和ｒ２ｋｘｇ３０×１９型罐形磁芯详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 50923/2-1995 |
Detail specification for types G2-01B-M1, G2-01B-Z1 metal case for semiconductor photosensitive devices ｇ２－０１ｂ－ｍ１型和ｇ２－０１ｂ－ｚ１型半导体光敏器件金属外壳详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ/T 10619-1995 |
Detail specification for electronic components Fixed power resistors Type RYG2 metal oxide film resistors Assessment level E 电子器件详细规范 功率型固定电阻器 ｒｙｇ２型金属氧化膜电阻器 评定水平ｅ |
China Electronics
Standards G2 |
English PDF |
| SJ 20032/1-1994 |
Detail specification for air dielectric tubular (piston type) trimmer variable capacitors, Model CWG27, CWG28 and CWG29 ｃｗｇ２７型、ｃｗｇ２８型和ｃｗｇ２９型空气介质管状（活塞型）微调可变电容器详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 20032-1994 |
Detail specification for air dielectric tubular (piston type) trimmer variable capacitors, Model CWG27, CWG28 and CWG29 cwg27型、cwg28型和cwg29型空气介质管状（活塞型）微调可变电容器详细规范 |
China Electronics
Standards G2 |
English PDF |
| TB/T 2450-1993 |
(ZG230-450 steel microstructure examination) zg230-450铸钢金相检验 |
China Railway & Train
Standards G2 |
English PDF |
| SJ/T 10348-1993 |
Detail specification for zinc oxide varistors for over-voltage protection for Type MYG2 电子器件详细规范 浪涌抑制型压敏电阻器 ｍｙｇ２型过压保护用氧化锌压敏电阻器 评定水平ｅ |
China Electronics
Standards G2 |
English PDF |
| SJ 20096-1992 |
Detail specification for type LG2 filter inductors of horizontal-power supplies ｌｇ２型行电源滤波电感器详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards G2 |
English PDF |
| SJ 20034-1992 |
Detail specification for air dielectric tubular (piston type) trimmer variable capacitor, Model JCWG26 ｊｃｗｇ２６型空气介质管状（活塞型）微调可变电容器详细规范 |
China Electronics
Standards G2 |
English PDF |
| JJG(SJ)04011-1987 |
Trial specification for verification of QG21-QG25 high frequency low-power transistor F testers |
China Metrological
Standards G2 |
English PDF |
| TB 1973-1987 |
(Ball check valve type and basic dimensions Dg15 DG20 Dg25) |
China Railway & Train
Standards G2 |
English PDF |
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