Standard Code | Standard Title | Standard Class | Order |
---|---|---|---|
YD/T 4282-2023 |
5G mobile communication network supports non-public network (NPN) technical requirements {译} 5G移动通信网支持非公共网络(NPN)技术要求 |
China Telecommunication Industry
Standards NPN |
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SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards NPN |
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SJ 50033/111-1996 |
Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor 半导体光电子器件 gt16型硅npn光电晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 3dg216型npn硅小功率差分对晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg144型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg143型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg142型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 3dk106型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 3dk100型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 bt51型npn硅小功率差分对晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 fh129型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 fh121型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 fh101型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 50033.40-1994 |
Detail specification for type GT11 semiconductor sililcon NPN photo-transistor gt11型半导体硅npn光敏晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20306-1993 |
Detail specification for types FH181A NPN silicon power Darlington transistor 半导体分立器件 fh181a型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 3ck3634~3ck3637型pnp硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 3dg3439型和3dg3440型npn硅小功率高反压晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 3dg918型npn硅超高频小功率晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 3dk2221(2221a、2222、2222a)型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 3dk2218(2218a、2219、2219a)型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 3dg213型npn硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 3dg210型npn硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 3dg120型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 3dg111型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 3dk105型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 3dk104型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 3dk103型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 3dk102型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 3dk101型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards NPN |
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