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GB standards are the China national standards; Prefix code GB are Mandatory standards, GB/T are Recommended standards; All products or service must be compliance with GB standards; If you want to export products or services to huge Chinese market, need ensure they are meet the requirements of GB china national standards;  We provide Chinese GB standards and English version GB standards  Lookup, Translate, Download, Imported Commodity GB standards Testing and Compliance review services.
  •  China "Power" GB Standards List:
  • Standard  Code GB Standard Title Standard Class Order
  • SJ 2672.4-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltag bipolar Power transistors, Type 3DA304 Power
    China Electronics Standards
  • SJ 2672.1-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA301 Power
    China Electronics Standards
  • SJ 2673.2-1986
  • Detail specification for electronic components--Case-rated 470MHz low voltage bipolar Power transistors, Type 3DA312 Power
    China Electronics Standards
  • SJ 2672.7-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA307 Power
    China Electronics Standards
  • SJ 2672.5-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA305 Power
    China Electronics Standards
  • SJ 2673.4-1986
  • Detail specification for electronic components--Case-rated 470MHz low voltage bipolar Power transistors, Type 3DA314 Power
    China Electronics Standards
  • SJ 2673.5-1986
  • Detail specification for electronic components--Case-rated 470MHz low voltage bipolar Power transistors, Type 3DA315 Power
    China Electronics Standards
  • SJ 2672.3-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA303 Power
    China Electronics Standards
  • SJ 2673.1-1986
  • Detail specification for electronic components--Case-rated 470MHz low voltage bipolar Power transistors, Type 3DA311 Power
    China Electronics Standards
  • SJ 2673.3-1986
  • Detail specification for electronic components--Case-rated 470MHz low voltage bipolar Power transistors, Type 3DA313 Power
    China Electronics Standards
  • SJ 2672.8-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA308 Power
    China Electronics Standards
  • SJ 2672.6-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA306 Power
    China Electronics Standards
  • SJ 2672.9-1986
  • Detail specification for electronic components--Case-rated 175MHz low voltage bipolar Power transistors, Type 3DA309 Power
    China Electronics Standards
  • SJ 2534.10-1986
  • Test procedures for antennas--Measurement of Power gain and directivity Power
    China Electronics Standards
  • SJ 2658.13-1986
  • Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical Power temperature coefficient Power
    China Electronics Standards
  • SJ 2658.6-1986
  • Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical Power Power
    China Electronics Standards
  • JT 4529-1986
  • (Steel ship shore Power connection technology requirements) Power
    China Highway & Transportation Standards
  • TB/T 1759-1986
  • (DC Power bus wiring rules for electrical equipment) Power
    China Railway & Train Standards
  • GB/T 5732-1985
  • Fixed resistors for use in electronic equipment--Part 4:Sectional specification--Fixed Power resistors Power
    China National Standards
  • GB/T 5733-1985
  • Fixed resistors for use in electronic equipment--Part 4:Blank detail specification--Fixed Power resistors Assessment level E Power
    China National Standards
  • GB/T 5730-1985
  • Fixed resistors for use in electronic equipment--Part 2:Sectional specification--Fixed low-Power nonwire wound resistors Power
    China National Standards
  • GB/T 5731-1985
  • Fixed resistors for use in electronic equipment--Part 2:Blank detail specification--Fixed low-Power non-wire wound resistors--Assessment level E Power
    China National Standards
  • TB 1341-1985
  • (AC Power distribution panel series and the main technical conditions) Power
    China Railway & Train Standards
  • TB 1340-1985
  • (DC Power distribution panel series and the main technical conditions) Power
    China Railway & Train Standards
  • GB/T 5441.9-1985
  • Test methods for communication cable--Test for ideal screening factor measured at Power frequency Power
    China National Standards
  • TB 1571-1985
  • (J · KH-type Power switch, J · KF type direction switch) Power
    China Railway & Train Standards
  • YY/T 91084-1999
  • Methods of measuring the sound Power of ultrasonic diagnostic equipment for medical use Power
    China Medicine & Medical Device Standards
  • GB/T 4890-1985
  • Statistical interpretation of data--Power of tests relating to means and variances of normal distributions Power
    China National Standards
  • SJ 2534.16-1987
  • Test procedures for antennas--Measurement of Power-capacity Power
    China Electronics Standards
  • SJ/Z 2556-1984
  • Typical calculations for 50Hz single-phase Power transformers using GE/GEB cores Power
    China Electronics Standards
  • SJ 2533-1984
  • General specification for high-voltage and high-Power pulse transformers used in radar Power
    China Electronics Standards
  • SJ 2532-1984
  • General specification for high-voltage and high-Power pulse generating networks used in radar Power
    China Electronics Standards
  • JJG 357-1984
  • Verification regulation of the thin film thermoelectric Power meter type 6460 Power
    China Metrological Standards
  • YDJ 31-1983
  • Technical specifications for Installation engineering construction and acceptance of communication Power supply equipment Power
    China Telecommunication Standards
  • GB/T 4215-1984
  • Determination of sound Power levels of noise emitted by metal cutting machine tools Power
    China National Standards
  • JJG(QJ)5-1984
  • (DC standard Power test procedures) Power
    China Metrological Standards
  • JJG(QJ)6-1984
  • (DC Power supply test procedures) Power
    China Metrological Standards
  • JJG 324-1983
  • Verification Regulation of UHF Power Signal Generator Type XG26 Power
    China Metrological Standards
  • SJ 2381-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high Power transistors, Type 3CD557, 3CD558 and 3CD657 Power
    China Electronics Standards
  • SJ 2362-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD159 and 3CD160 Power
    China Electronics Standards
  • SJ 2379-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high Power transistors, Type 3CD553, 3CD554 and 3CD653 Power
    China Electronics Standards
  • SJ 2376-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high Power transistors, Type 3CD647 Power
    China Electronics Standards
  • SJ 2365-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD167 and 3CD367 Power
    China Electronics Standards
  • SJ 2378-1983
  • Detail specification for silicon PNPepitaxial planar low frequency high Power transistors, Type 3CD551, 3CD552 and 3CD651 Power
    China Electronics Standards
  • SJ 2380-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high Power transistors, Type 3CD555, 3CD556 and 3CD655 Power
    China Electronics Standards
  • SJ 2382-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high Power transistors, Type 3CD559 and 3CD560 Power
    China Electronics Standards
  • SJ 2363-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD162 and 3Cd362 Power
    China Electronics Standards
  • SJ 2364-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3Cd164 and 3CD364 Power
    China Electronics Standards
  • SJ 2377-1983
  • Detail specification for silicon PNP epitaxial planar low frequency high Power transistors, Type 3CD548 3CD550 and 3CD649 Power
    China Electronics Standards
  • SJ 2374-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD264, 3CD464 Power
    China Electronics Standards
  • SJ 2367-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD249, 3CD250 and 3CD449 Power
    China Electronics Standards
  • SJ 2361-1983
  • Detail specification for silicon PNP low frequency low voltage high Power low frequency low voltage high power transistors, Type 3CD157, 3CD158 and 3CD357 Power
    China Electronics Standards
  • SJ 2368-1983
  • Detail specification for silicon PNP low frequncy high voltage high Power transistors, Type 3CD251, 3CD252 and 3CD451 Power
    China Electronics Standards
  • SJ 2357-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD149, 3CD150 and 3CD349 Power
    China Electronics Standards
  • SJ 2371-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD257, 3CD258 and 3CD457 Power
    China Electronics Standards
  • SJ 2370-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD255, 3CD256 and 3CD455 Power
    China Electronics Standards
  • SJ 2373-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD262 and 3CD462 Power
    China Electronics Standards
  • SJ 2372-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD259 and 3CD260 Power
    China Electronics Standards
  • SJ 2369-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD253, 3CD254 and 3CD453 Power
    China Electronics Standards
  • SJ 2366-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD447 Power
    China Electronics Standards
  • SJ 2375-1983
  • Detail specification for silicon PNP low frequency high voltage high Power transistors, Type 3CD267 and 3CD467 Power
    China Electronics Standards
  • SJ 2360-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD155, 3CD156 and 3CD355 Power
    China Electronics Standards
  • SJ 2359-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD153, 3CD154 and 3CD353 Power
    China Electronics Standards
  • SJ 2358-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD151, 3CD152 and 3CD351 Power
    China Electronics Standards
  • SJ 2356-1983
  • Detail specification for silicon PNP low frequency low voltage high Power transistors, Type 3CD347 Power
    China Electronics Standards
  • SJ 2354.9-1983
  • Method of measurement for noise equivalent Power of PIN and avalanche photodiodes Power
    China Electronics Standards
  • GB/T 3770-1983
  • Determination of sound Power level for noise emitted by woodworking machinery Power
    China National Standards
  • SJ 2280-1983
  • (3DG131 type NPN silicon epitaxial planar transistor low Power UHF) Power
    China Electronics Standards
  • SJ 2279-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG123 Power
    China Electronics Standards
  • SJ 2289-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG151 Power
    China Electronics Standards
  • SJ 2274-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG113 Power
    China Electronics Standards
  • SJ 2288-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG149 Power
    China Electronics Standards
  • SJ 2283-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG144 Power
    China Electronics Standards
  • SJ 2294-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG156 Power
    China Electronics Standards
  • SJ 2290-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG151 Power
    China Electronics Standards
  • SJ 2291-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG153 Power
    China Electronics Standards
  • SJ 2273-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG81 Power
    China Electronics Standards
  • SJ 2276-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG114 Power
    China Electronics Standards
  • SJ 2284-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG145 Power
    China Electronics Standards
  • SJ 2293-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG155 Power
    China Electronics Standards
  • SJ 2285-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG146 Power
    China Electronics Standards
  • SJ 2281-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG132 Power
    China Electronics Standards
  • SJ 2286-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG147 Power
    China Electronics Standards
  • SJ 2287-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Tuype 3DG148 Power
    China Electronics Standards
  • SJ 2278-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG72 Power
    China Electronics Standards
  • SJ 2292-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG154 Power
    China Electronics Standards
  • SJ 2277-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG115 Power
    China Electronics Standards
  • SJ 2271-1983
  • Type 3DG104 silicon NPN epitaxial planar super-high frequency low Power triodes Power
    China Electronics Standards
  • SJ 2282-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low Power transistors, Type 3DG143 Power
    China Electronics Standards
  • SJ 2275-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG85 Power
    China Electronics Standards
  • SJ 2272-1983
  • Detail specification for silicon NPN epitaxial planar superhigh frequency low Power transistors, Type 3DG44 Power
    China Electronics Standards
  • GB/T 3316-1982
  • Method of defining the nominal Power for disel locomotives Power
    China National Standards
  • JT/T 101-1991
  • Short-circuit calculations for marine alternating current Power systems Power
    China Highway & Transportation Standards
  • GB/T 3307-1982
  • Method of heater intermittent test of low-Power electronic tubes Power
    China National Standards
  • SJ 2093-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS36 Power
    China Electronics Standards
  • SJ 2105-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS48 Power
    China Electronics Standards
  • SJ 2097-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS40 Power
    China Electronics Standards
  • SJ 2098-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS41 Power
    China Electronics Standards
  • SJ 2096-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS39 Power
    China Electronics Standards
  • SJ 2099-1982
  • Detail specification for N channel junction field-effect low Power switching transistors, Type CS42 Power
    China Electronics Standards

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